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Growth method and the device of the even nonpolar characteristic {1 100} m surface nitriding gallium due to organic metal chemical vapor phase growth method (MOCVD)
Growth method and the device of the even nonpolar characteristic {1 100} m surface nitriding gallium due to organic metal chemical vapor phase growth method (MOCVD)
III family nitride material, it features that it grows making use of organic metal chemical vapor phase growth method (MOCVD) on the suitable baseplate like m surface silicon carbide (m SiC), m surface III family nitride material like even nonpolar characteristic m surface nitriding gallium (GaN) epitaxial layer the method of growing is offered. Aforementioned method in order to remove the oxide film from the baseplate surface washes the baseplate with the solvent, nonpolar characteristic m surface III family nitride epitaxial layer includes the process which grows with respect to karyotype stratification process and it heat-treats process and the baseplate which are soaked in acid the karyotype stratification like aluminum nitride (AlN) on the baseplate which was heat-treated making use of process and the MOCVD method which grow.
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