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Nucleation and epitaxy of conductive buffers on (001) copper for coated high-temperature superconducting conductors.

机译：用于涂覆的高温超导导体的（001）铜上的导电缓冲剂的形核和外延。

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摘要

In the 2nd generation wire technology of high temperature superconducting coated conductors, highly conductive and nonmagnetic Cu substrate can improve the wire properties along with the conductive buffer layers, offering fully conductive wire architecture. This scheme requires two components, namely oxidation resistance for the Cu tape and conductive buffer layers.; The growth of epitaxial Cu2Mg as an oxidation barrier was investigated. Epitaxy of (004) Cu2Mg intermetallic phase was achieved on (002) Cu film. An in-plane ϕ-scan through the Cu2Mg (222) and the x-ray diffraction rocking curve for the (004) Cu2Mg peak indicates that the intermetallic phase is well oriented on (002) Cu surface.; The perovskite (La,Sr)TiO3 was investigated as a possible conducting oxide buffer layer for high temperature superconducting coated conductors. YBa2Cu3O7 was grown epitaxially on (La,Sr)TiO3 buffer layer on SrTiO3 substrate with excellent in-plane and out-of-plane alignment. The superconducting transition temperature (Tc) of YBa2Cu3O 7/(La,Sr)TiO3/SrTiO3 structure was 91 K and the critical current density (Jc) of this structure was 2.18x106 A/cm2 at 0 magnetic field. The resistivity results of a post annealed sample at YBa2Cu 3O7 deposition condition indicates that the (La,Sr)TiO 3 layer can be a candidate for the conductive buffer layer in the coated conductor applications. The epitaxial film growth of (La,Sr)TiO3 was examined on Ni-W metal alloy tape. The transition metal nitride such as TiN was deposited epitaxially on Ni-W tape by PLD and played an excellent role as a seed layer for (La,Sr)TiO3 film growth on Ni-W tape. The YBa2Cu3O7 film was deposited epitaxially on the (La,Sr)TiO3 buffer layer with the TiN seed layer on Ni-W tape. The YBa2Cu3O7 film grown on (La,Sr)TiO 3/TiN/Ni-W tape has Tc of 89 K and Jc of 0.42x106 A/cm2.; The epitaxial film growth of (La,Sr)TiO3 was examined on Cu tape as a possible conducting buffer layer for high temperature superconducting coated conductors. The noble metal, such as Ir, was deposited epitaxially on Cu tape by PLD for an oxygen diffusion barrier. The YBa2Cu 3O7 film was deposited epitaxially on the (La,Sr)TiO 3 and Ir buffer stack on Cu tape. The YBa2Cu3O 7 film grown on the (La,Sr)TiO3/Ir/Cu tape has a superconducting transition temperature of 90 K and a critical current density value of 1.0x10 6 A/cm2. This shows that (La,Sr)TiO3 is a possible candidate for the conductive buffer layer in the Cu based RABiTS applications.
机译：在高温超导涂层导体的第二代导线技术中，高导电性和非磁性的Cu基材可与导电缓冲层一起改善导线性能，从而提供完全导电的导线结构。该方案需要两个组件，即铜带的抗氧化性和导电缓冲层。研究了外延生长的Cu2Mg作为氧化阻挡层。在（002）Cu膜上实现了（004）Cu 2 Mg金属间相的外延。通过Cu 2 Mg（222）的面内-扫描和（004）Cu 2 Mg峰的X射线衍射摇摆曲线表明，金属间相在（002）Cu表面上取向良好。研究了钙钛矿（La，Sr）TiO3作为高温超导涂层导体可能的导电氧化物缓冲层。 YBa2Cu3O7外延生长在SrTiO3衬底上的（La，Sr）TiO3缓冲层上，具有出色的面内和面外排列。 YBa2Cu3O 7 /（La，Sr）TiO3 / SrTiO3结构的超导转变温度（Tc）为91 K，在0磁场下，该结构的临界电流密度（Jc）为2.18x106 A / cm2。在YBa2Cu 3O7沉积条件下的后退火样品的电阻率结果表明（La，Sr）TiO 3层可以作为涂覆导体应用中的导电缓冲层的候选层。在Ni-W金属合金带上检查了（La，Sr）TiO3的外延膜生长。过渡金属氮化物（如TiN）通过PLD外延沉积在Ni-W胶带上，并在Ni-W胶带上作为（La，Sr）TiO3薄膜生长的种子层发挥了出色的作用。将YBa2Cu3O7膜外延沉积在（La，Sr）TiO3缓冲层上，并在Ni-W胶带上沉积TiN种子层。在（La，Sr）TiO 3 / TiN / Ni-W带上生长的YBa 2 Cu 3 O 7膜的Tc为89K，Jc为0.42×106A / cm 2。在铜带上检查了（La，Sr）TiO3的外延膜生长，作为高温超导涂层导体可能的导电缓冲层。贵金属（例如Ir）通过PLD外延沉积在铜带上以形成氧扩散阻挡层。 YBa2Cu 3O7薄膜外延沉积在铜带上的（La，Sr）TiO 3和Ir缓冲层上。在（La，Sr）TiO3 / Ir / Cu带上生长的YBa2Cu3O 7膜的超导转变温度为90 K，临界电流密度值为1.0x10 6 A / cm2。这表明（La，Sr）TiO3是基于Cu的RABiTS应用中的导电缓冲层的可能候选物。

著录项

  • 作者

    Kim, Kyunghoon.;

  • 作者单位

    University of Florida.;

  • 授予单位 University of Florida.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 147 p.
  • 总页数 147
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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