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Development of buffer layers by chemical solution deposition for YBCO coated conductors.

机译：通过化学溶液沉积为YBCO涂层导体开发缓冲层。

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摘要

Short length YBCO coated conductors have been fabricated by vacuum thin film deposition techniques. However, the fabrication process increases the cost, and makes them impractical to use for commercial applications even if they are fabricated in kilometer lengths. YBCO coated conductors could be available in the market with a cheaper price by developing non-vacuum deposition techniques. The objective of this research was to investigate development of buffer layers by chemical solution deposition technique for YBCO coated conductors. Buffer layer structures are mainly used to prevent metal ion diffusion, and to reduce the lattice mismatch between YBCO and the metallic substrate. The technical approach, which was adapted here, is the reel-to-reel sol-gel dip coating process to fabricate long length coatings by developing buffer layers' chemical solutions. Rolling assisted biaxially textured Ni substrates were used for deposition of buffer layers. Cold rolled Ni strips were heat-treated at certain conditions to form biaxially textured structure, which became templates for textured growth of buffer layers that is necessary to obtain high critical current in the coated conductors. CeO2 was chosen as a buffer layers because it has been recognized as one of the best cap layers. Growth of highly textured, crack free, pinhole free and smooth CeO2 buffer layers have been demonstrated by chemical solution deposition technique on biaxially textured substrates. A new buffer layer with pseudocubic lattice parameters matching YBCO, (Eu0.893Yb0.107)2O3, was developed for the first time by using a mixture of Eu2O 3 and Yb2O3 to eliminate lattice mismatch, which adversely affected the critical current of the coated conductors. Highly textured (Eu0.893Yb0.107)2O3 buffer layers were deposited on biaxially textured Ni substrates by chemical solution deposition technique. Finally, the growth of CeO2 and (Eu0.893Yb 0.107)2O3 buffer layers were investigated on oxide layers because both CeO2 and (Eu0.893Yb0.107) 2O3 are used as cap layers. CeO2 buffer layers were deposited on Gd2O3 buffer layers and (Eu0.993 Yb0.107)2O3 buffer layers were deposited on CeO2/Gd2O3 buffer layers structure. It has been demonstrated that biaxially textured buffer layers can be grown on both biaxially textured metallic substrates and oxide thin films. These results are very promising for applicability of chemical solution deposition technique for coated conductors fabrication.
机译：已经通过真空薄膜沉积技术制造了短长度的YBCO涂层导体。然而，制造过程增加了成本，并且使得即使将它们制造成千米长度，也无法将它们用于商业应用。通过开发非真空沉积技术，可以以较低的价格在市场上购买YBCO涂层导体。这项研究的目的是研究通过化学溶液沉积技术对YBCO涂层导体进行缓冲层的开发。缓冲层结构主要用于防止金属离子扩散，并减少YBCO和金属基板之间的晶格失配。这里采用的技术方法是卷到卷的溶胶-凝胶浸涂工艺，通过开发缓冲层的化学溶液来制造长距离的涂层。使用轧制辅助的双轴织构的Ni衬底来沉积缓冲层。在某些条件下对冷轧的镍带进行热处理，以形成双轴织构结构，该结构成为缓冲层织构化生长的模板，这是在涂层导体中获得高临界电流所必需的。选择CeO 2 作为缓冲层是因为它被认为是最好的覆盖层之一。通过化学溶液沉积技术，在双轴织构衬底上证明了高度织构，无裂纹，无针孔且平滑的CeO 2 缓冲层的生长。一个新的伪层晶格参数与YBCO匹配的缓冲层（Eu 0.893 Yb 0.107 ） 2 O 3 通过使用Eu 2 O 3 和Yb 2 O 3 的混合物消除晶格而首次开发失配，这不利地影响了涂层导体的临界电流。通过化学方法在双轴织构的Ni衬底上沉积高织构（Eu 0.893 Yb 0.107 ） 2 O 3 缓冲层溶液沉积技术。最终，CeO 2 和（Eu 0.893 Yb 0.107 ） 2 O 3 2 和（Eu 0.893 Yb 0.107 ） 2 O均在氧化物层上研究了sub>缓冲层 3 用作覆盖层。 CeO 2 缓冲层沉积在Gd 2 O 3 缓冲层和（Eu 0.993 Yb 0.107 ） 2 O 3 缓冲层沉积在CeO 2 / Gd 2 O 上3 缓冲层结构。已经证明双轴织构的缓冲层可以在双轴织构的金属基板和氧化物薄膜上生长。这些结果对于化学溶液沉积技术在涂覆导体制造中的适用性非常有希望。

著录项

  • 作者

    Akin, Yalcin.;

  • 作者单位

    University of Florida.;

  • 授予单位 University of Florida.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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