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Stochastic Modeling and Control of Film Porosity, Surface Roughness and Thickness in Thin Film Growth.

机译：薄膜生长中薄膜孔隙率，表面粗糙度和厚度的随机建模和控制。

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摘要

Currently, there is an increasing need to improve semiconductor manufacturing process operation and yield. This need has arisen due to the increased complexity and density of devices on the wafer, which is the result of increased wafer size and smaller device dimensions. Within this manufacturing environment, thin film microstructure, including thin film surface roughness and amount of internal film defects, has emerged as an important film quality variable, which strongly influences the electrical and mechanical properties of micro-electronic devices. On one hand, surface roughness of thin films controls the interfacial layer and properties between two successively deposited films. On the other hand, the amount of internal defects, usually expressed as film porosity, plays an important role in determining the thin film microstructure. At this stage, previous research efforts have exclusively focused on control of thin film surface roughness and have not addressed the challenging issue of simultaneously regulating film surface roughness, porosity, and thickness while reducing run-to-run film variability.;This dissertation presents a unified and practical framework for modeling and control of film porosity, surface roughness, and thickness in thin film growth. Specifically, we will present novel definitions for describing film porosity, and stochastic modeling and parameter estimation techniques for constructing dynamic models for roughness, porosity, and film thickness. We will also present state/output feedback covariance control and model predictive control problem formulations and solutions which lead to a balanced trade-off in the closed-loop system between the three, possibly conflicting, control objectives of surface roughness, film thickness, and porosity regulation. The application of the proposed modeling and control methods to complex thin film deposition and sputtering processes will be discussed and simulation results will be shown to demonstrate the resulting closed-loop system performance and robustness.
机译：当前，越来越需要改善半导体制造工艺的操作和成品率。由于晶片上装置的复杂性和密度的增加而产生了这种需求，这是晶片尺寸增加和装置尺寸较小的结果。在这种制造环境中，包括薄膜表面粗糙度和内部薄膜缺陷数量在内的薄膜微观结构已成为一种重要的薄膜质量变量，这对微电子器件的电气和机械性能产生了重大影响。一方面，薄膜的表面粗糙度控制着两个连续沉积的薄膜之间的界面层和性能。另一方面，内部缺陷的数量通常表示为膜的孔隙率，在确定薄膜的微观结构中起着重要的作用。在这个阶段，以前的研究工作只集中在控制薄膜表面粗糙度上，还没有解决在减少薄膜间差异的同时调节薄膜表面粗糙度，孔隙率和厚度的挑战性问题。统一实用的框架，用于建模和控制薄膜生长中的薄膜孔隙率，表面粗糙度和厚度。具体而言，我们将提供新颖的定义来描述膜的孔隙度，以及用于构建粗糙度，孔隙率和膜厚度的动态模型的随机建模和参数估计技术。我们还将介绍状态/输出反馈协方差控制以及模型预测控制问题的公式和解决方案，这些问题的解决方案和解决方案将导致闭环系统在表面粗糙度，薄膜厚度和孔隙率这三个可能相互冲突的控制目标之间取得平衡规。将讨论所提出的建模和控制方法在复杂的薄膜沉积和溅射工艺中的应用，并显示仿真结果以证明所产生的闭环系统性能和鲁棒性。

著录项

  • 作者

    Hu, Gangshi.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Engineering Chemical.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 289 p.
  • 总页数 289
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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