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首页> 外文学位 >Probing Electronic, Structural, and Charge Transfer Properties of Organic Semiconductor/Inorganic Oxide Interfaces Using Field-Effect Transistors.
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Probing Electronic, Structural, and Charge Transfer Properties of Organic Semiconductor/Inorganic Oxide Interfaces Using Field-Effect Transistors.

机译：使用场效应晶体管探测有机半导体/无机氧化物界面的电子，结构和电荷转移性质。

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摘要

Interfaces between organic semiconductors and inorganic oxides provide the functionality for devices including field-effect transistors (FETs) and organic photovoltaics. Organic FETs are sensitive to the physical structure and electronic properties of the few molecular layers of material at the interface between the semiconducting channel and the gate dielectric, and provide quantitative information such as the field-effect mobility of charge carriers and the concentration of trapped charge. In this thesis, FET interfaces between organic small-molecule semiconductors and SiO2, and donor/acceptor interfaces between organic small-molecules and the wide bandgap semiconductor ZnO are studied using electrical measurements of field-effect transistor devices.;Monolayer-scale films of dihexyl sexithiophene are shown to have higher hole mobility than other monolayer organic semiconductors, and the origin of the high mobility is discussed. Studies of the crystal structure of the monolayer using X-ray structural probes and atomic force microscopy reveal the crystal structure is different in the monolayer regime compared to thicker films and bulk crystals. Progress and remaining challenges are discussed for in situ X-ray diffraction studies of the dynamic changes in the local crystal structure in organic monolayers due to charge carriers generated during the application of electric fields from the gate electrode in working FETs.;Studies were conducted of light sensitive organic/inorganic interfaces that are modified with organic molecules grafted to the surface of ZnO nanoparticles and thin films. These interfaces are models for donor/acceptor interfaces in photovoltaics. The process of exciton dissociation at the donor/acceptor interface was sensitive to the insulating or semiconducting molecules grafted to the ZnO, and the photoinduced charge transfer process is measured by the threshold voltage shift of FETs during illumination.;Charge transfer between light sensitive donor molecules based on rhenium bipyridine complexes and ZnO thin films was measured using FETs, revealing the role of positive trapped charge in persistent photoconductivity in donor sensitized ZnO. The carboxylic acid attachment chemistry, used to anchor the donor molecules, is demonstrated to enhance the conductivity of ZnO thin films. The mechanism for the enhanced conductivity is linked to the passivation of defects on the surface of the ZnO.
机译：有机半导体和无机氧化物之间的界面为包括场效应晶体管（FET）和有机光伏电池在内的设备提供了功能。有机FET对半导体沟道和栅极电介质之间界面处的少数几个材料分子层的物理结构和电子性质敏感，并提供定量信息，例如电荷载流子的场效应迁移率和俘获电荷的浓度。本文利用场效应晶体管器件的电学测量方法研究了有机小分子半导体与SiO2之间的FET界面，有机小分子与宽带隙半导体ZnO之间的施主/受主界面。已显示六噻吩具有比其他单层有机半导体更高的空穴迁移率，并讨论了高迁移率的起源。使用X射线结构探针和原子力显微镜对单层晶体结构的研究表明，与较厚的薄膜和块状晶体相比，单层结构的晶体结构有所不同。讨论了在原位X射线衍射研究有机单分子层中局部晶体结构动态变化的进展和尚存的挑战，这些动态变化是由于在工作FET中从栅电极施加电场期间产生的电荷载流子而引起的。用接枝到ZnO纳米颗粒和薄膜表面的有机分子修饰的光敏有机/无机界面。这些接口是光伏中供体/受体接口的模型。供体/受体界面处的激子解离过程对接枝到ZnO上的绝缘或半导体分子敏感，并且光致电荷转移过程通过照明期间FET的阈值电压偏移来测量。场效应管测量了基于py联吡啶配合物和ZnO薄膜的化合物，揭示了正电荷陷阱在施主敏化的ZnO中在持久光电导中的作用。已证明用于锚定供体分子的羧酸附着化学作用可增强ZnO薄膜的电导率。提高电导率的机制与ZnO表面缺陷的钝化有关。

著录项

  • 作者

    Spalenka, Josef Wade.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Chemistry Inorganic.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 162 p.
  • 总页数 162
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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