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首页> 外文学位 >Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of III-nitride heterostructures for application in electronic devices.
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Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of III-nitride heterostructures for application in electronic devices.

机译：金属有机气相外延（MOVPE）的生长和III-氮化物异质结构的表征，用于电子设备。

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摘要

In this thesis we have demonstrated Metalorganic Vapor Phase Epitaxy (MOVPE) of single layer GaN and various III-Nitride heterostructures for application in electronic devices. The MOVPE technique was successfully applied to both a horizontal system and a vertical close-coupled showerhead (CCS) systems. A new gas mixing system was designed specifically for GaN growth. Our unintentionally doped (UID) GaN growth by CCS MOVPE had a mobility of 326 cm2/Vs, background carrier concentration of 4 x 1016 cm -3 and total TD density from 2-6 x 109 cm -2. Growth rate, mobility and carrier concentration were uniform to less than +/-5% across the full 2'' wafer.; High resistance (HR) GaN templates for AlGaN/GaN Hetrojunction Field Effect Transistor (HFET) applications were grown using CCS MOVPE. The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature and NL thickness. Using an annealing temperature of 1033°C and NL thickness of 26 nm, GaN with sheet resistance of 1010 O/sq was achieved. AlGaN/GaN HFET layers grown using HR GaN templates show low interface roughness (10A), high RT 2DEG mobility (∼1300 cm2/Vs) and uniformity of 5%. Devices using the HR GaN template show improvement in both ft and fmax from 7 and 12 GHz for the UID template to 12 and 35 GHz using HR template. These results show a clear advantage in device performance for HR template layers.; The horizontal MOVPE technique was used to grow AlN/GaN MIS-type heterostructures with AlN thickness between 3 nm and 30 nm. By decreasing the ammonia flow during AlN growth (lower V/III ratio), surface and interface quality were greatly improved with a corresponding improvement in electrical properties. The best RT mobility, for both optimal V/III and thickness, was 1015 cm 2/Vs with a sheet charge of 1.1 x 1013 cm -2. Electrical characterization of MIS diodes fabricated from the AlN/GaN layers show that a 2DEG is formed very near the AlN/GaN interface. The results show the possibility to use MOVPE for growth of device quality AlN/GaN MIS-type heterostructures.; The Photo Electrochemical (PEC) etching technique was applied to the single GaN layers grown in this study. Whisker formation observed under these conditions was used to measure the dislocation density in the single GaN layers. Additionally, whisker formation was reduced under PEC etch conditions that use a Hg(Xe) light source.
机译：在本文中，我们已经证明了单层GaN的金属有机气相外延（MOVPE）和各种III-氮化物异质结构可用于电子设备。 MOVPE技术已成功应用于水平系统和垂直紧密耦合喷头（CCS）系统。专为GaN生长设计了一种新的气体混合系统。我们通过CCS MOVPE进行的无意掺杂（UID）GaN生长具有326 cm2 / Vs的迁移率，背景载流子浓度为4 x 1016 cm -3，总TD密度为2-6 x 109 cm -2。整个2''晶圆的生长速率，迁移率和载流子浓度均匀至小于+/- 5％。使用CCS MOVPE生长了用于AlGaN / GaN异质结场效应晶体管（HFET）应用的高电阻（HR）GaN模板。使用最终成核层（NL）退火温度和NL厚度调整GaN薄层电阻。使用1033°C的退火温度和26 nm的NL厚度，获得了具有1010 O / sq的薄层电阻的GaN。使用HR GaN模板生长的AlGaN / GaN HFET层显示出低的界面粗糙度（<10A），高的RT 2DEG迁移率（〜1300 cm2 / Vs）和均匀度<5％。使用HR GaN模板的设备在ft和fmax方面均有所改善，从UID模板的7 GHz和12 GHz到使用HR模板的12 GHz和35 GHz。这些结果显示了针对HR模板层的设备性能的明显优势。水平MOVPE技术用于生长AlN厚度在3 nm至30 nm之间的AlN / GaN MIS型异质结构。通过减少AlN生长期间的氨流量（降低V / III比），表面和界面质量得到了极大的改善，同时电气性能也得到了相应的改善。对于最佳的V / III和厚度，最佳的RT迁移率均为1015 cm 2 / Vs，片电荷为1.1 x 1013 cm -2。由AlN / GaN层制成的MIS二极管的电特性表明，非常靠近AlN / GaN界面形成了2DEG。结果表明使用MOVPE可以提高器件质量的AlN / GaN MIS型异质结构。将光电化学（PEC）蚀刻技术应用于本研究中生长的单个GaN层。在这些条件下观察到的晶须形成被用于测量单个GaN层中的位错密度。此外，在使用Hg（Xe）光源的PEC蚀刻条件下，晶须的形成减少了。

著录项

  • 作者

    Hubbard, Seth Martin.;

  • 作者单位

    University of Michigan.;

  • 授予单位 University of Michigan.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 254 p.
  • 总页数 254
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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