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Growth of carbon nanotubes on patterned silicon wafer by thermal chemical vapor deposition (CVD).

机译：通过热化学气相沉积（CVD）在图案化的硅晶片上生长碳纳米管。

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Since Iijima discovered carbon nanotubes in 1991, its excellent mechanical, chemical, and other properties attract many scientists do related researches. In order to apply it into different fields successfully, how to grow up uniformed and quality carbon nanotubes become an important issue. In this thesis, carbon nanotubes are grown up on the patterned silicon wafer by thermal chemical vapor deposition. Adjust the processing conditions which include temperature, gas flow, catalyst thickness and time in each experiment to find out the better recipe for growing carbon nanotubes. The Scanning electron microscopy (SEM) and atomic force microscope (AFM) images present the best conditions in this experiment are: 700°C reaction temperature, 10 minutes pretreatment, less than 6 nm catalyst thickness, and short reaction time.

机译：自饭岛（Iijima）于1991年发现碳纳米管以来，其优异的机械，化学和其他性能吸引了许多科学家进行相关研究。为了成功地将其应用于不同领域，如何长成均匀且优质的碳纳米管成为重要的问题。本文通过热化学气相沉积法在图案化的硅片上生长碳纳米管。在每个实验中调整处理条件，包括温度，气体流量，催化剂厚度和时间，以找出生长碳纳米管的更好配方。扫描电子显微镜（SEM）和原子力显微镜（AFM）图像显示了该实验中的最佳条件：700°C反应温度，10分钟预处理，小于6 nm的催化剂厚度和较短的反应时间。

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作者
Wang, Chiu-Hui.;
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作者单位

Southern Illinois University at Carbondale.;

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授予单位 Southern Illinois University at Carbondale.;
学科 Engineering Mechanical.; Engineering Materials Science.; Physics Condensed Matter.
学位 M.S.
年度 2005
页码 64 p.
总页数 64
原文格式 PDF
正文语种 eng
中图分类机械、仪表工业;工程材料学;
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专利

1. Various temperature effects on the growth of carbon nanotubes (CNTs) by thermal chemical vapor deposition (TCVD) method [J] . A. Mahmoodi, M. Ghoranneviss, M. Mojtahedzadeh, International Journal of Physical Sciences . 2012,第6期

机译：热化学气相沉积（TCVD）方法对碳纳米管（CNTs）生长的各种温度影响
2. Thermal chemical vapor deposition (T-CVD) growth of carbon nanotubes on different metallic underlayers [J] . Kim S.M., Gangloff L. Physica, E. Low-dimensional systems & nanostructures . 2011,第8期

机译：碳纳米管在不同金属底层上的热化学气相沉积（T-CVD）生长
3. Effects of carbon content in iron catalyst coatings on the growth of vertically aligned carbon nanotubes on smooth silicon surfaces by thermal chemical vapor deposition [J] . C. Liu, Y. C. Chen, Y. Tzeng Diamond and Related Materials . 2004,第4a8期

机译：铁催化剂涂层中碳含量对通过热化学气相沉积法在光滑硅表面上垂直排列的碳纳米管生长的影响
4. Comparison of the Growth Si-based Crystalline Silicon Carbide (SiC) by Chemical Vapor Deposition (CVD) using Carbon Monoxide (CO) and Treated Carbon Dioxide (CO2) [C] . Lim, A.Y.K., Ibrahim, . 2006

机译：使用一氧化碳（CO）和已处理的二氧化碳（CO2）进行化学气相沉积（CVD）来生长硅基结晶碳化硅（SiC）的比较
5. Carbon nanotube growth on tool steel substrates by thermal chemical vapor deposition (CVD) [D] . Nasuf, Gulfem Ipek 2008

机译：通过热化学气相沉积（CVD）在工具钢基材上生长碳纳米管
6. Ultrafast Patterning Vertically Aligned Carbon Nanotube Forest on Al Foil and Si Substrate Using Chemical Vapor Deposition (CVD) [O] . Yan-Rui Li, Chin-Ping Huang, Chih-Chung Su, 2019

机译：使用化学气相沉积（CVD）在铝箔和硅基底上超快图案化垂直排列的碳纳米管森林
7. Growth mechanisms of single-wall carbon nanotubes in a chemical vapor deposition (CVD) process on Fe/Mo-Al catalyst [O] . Thang Van Le 2013

机译：在Fe / Mo-Al催化剂中化学气相沉积（CVD）工艺中单壁碳纳米管的生长机制
8. Comparative Study of Three Different Chemical Vapor Deposition (CVD) Techniques of Carbon Nanotube Growth on Diamond Films. [R] . B. Tsao B. T. Quinton C. V. Varanasi J. Burke P. N. Barnes 2013

机译：金刚石薄膜上碳纳米管生长的三种不同化学气相沉积（CVD）技术的比较研究。

Growth of carbon nanotubes on patterned silicon wafer by thermal chemical vapor deposition (CVD).

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