A fully differential CMOS charge pump and VCO at high frequency.

机译：高频下的全差分CMOS电荷泵和VCO。

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This thesis is about the design of high frequency, low noise and low power oscillators. Phase noise, frequency and power consumption are some of the important factors in VCO design.; As part of this research, two chips were fabricated using IBM's CMOS 0.13 micron RF technology. The first chip consisted of two high-frequency negative transconductance VCOs designed for oscillation frequencies of 20 GHz and 30 GHz, while measured oscillation frequencies were 16 GHz and 23 GHz, respectively. Both VCOs have also been tested to have a 1 GHz tuning range and consume less than 4 mA of current each.; The second chip consisted of three VCOs, expected to operate at 17 GHz and have a tuning range of 1 GHz, however, these have not been tested. The first is an improvement of the VCOs from the first chip. The second is a fully differential (input and output) negative Gm VCO. The third is also fully differential, but uses a constant current source.; A fully differential charge pump, operating at 200 MHz with a charge pump current of 200 muA, is also fabricated to complement the fully differential VCOs.

机译：本文是关于高频，低噪声，低功耗振荡器的设计。相位噪声，频率和功耗是VCO设计中的一些重要因素。作为这项研究的一部分，使用IBM的CMOS 0.13微米RF技术制造了两个芯片。第一个芯片由两个高频负跨导VCO组成，这些VCO设计用于20 GHz和30 GHz的振荡频率，而测得的振荡频率分别为16 GHz和23 GHz。两个VCO都经过了测试，具有1 GHz的调谐范围，每个电流消耗小于4 mA的电流。第二块芯片由三个VCO组成，预期工作在17 GHz且调谐范围为1 GHz，但是尚未经过测试。首先是对第一个芯片的VCO的改进。第二个是全差分（输入和输出）负Gm VCO。第三个也是完全差分的，但是使用恒定电流源。还制造了一个全差分电荷泵，以200 MHz的频率工作，电荷泵电流为200μA，用以补充全差分VCO。

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作者
Chiu, James.;
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作者单位

Carleton University (Canada).;

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授予单位 Carleton University (Canada).;
学科 Engineering Electronics and Electrical.
学位 M.A.Sc.
年度 2005
页码 82 p.
总页数 82
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. 350 mV, 5 GHz Class-D Enhanced Swing Differential and Quadrature VCOs in 65 nm CMOS [J] . Guha Roy Ankur, Dey Siladitya, Goins Justin B., Solid-State Circuits, IEEE Journal of . 2015,第8期

机译：在65 nm CMOS中具有350 mV，5 GHz D类增强型摆幅差分和正交VCO
2. A wide band differentially switch-tuned CMOS monolithic quadrature VCO with a low Kvco and high linearity [J] . Ke Zhang, Shiwei Cheng, Xiaofang Zhou, Microelectronics journal . 2009,第6期

机译：具有低Kvco和高线性度的宽带差分开关调谐CMOS单片正交VCO
3. 5-GHz Low Power Current-Reused Balanced CMOS Differential Armstrong VCOs [J] . Chuang Y.-H., Jang S.-L., Lee S.-H., IEEE microwave and wireless components letters . 2007,第期

机译：5 GHz低功耗电流重用平衡CMOS差分Armstrong VCO
4. Differential PLL for wireless applications using differential CMOS LC-VCO and differential charge pump [C] . Ayman ElSayed, Akbar Ali, M. I. Elmasry International symposium on Low power electronics and design . 1999

机译：使用差分CMOS LC-VCO和差分电荷泵的无线应用的差分PLL
5. A Charge Pump Architecture with High Power-Efficiency and Low Output Ripple Noise in 0.5 mum CMOS Process Technology. [D] . Modi, Primit. 2012

机译：采用0.5 um CMOS工艺技术的具有高功率效率和低输出纹波噪声的电荷泵架构。
6. A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes [O] . Xiang Li, Rui Li, Chunge Ju, 2019

机译：用于微机械陀螺仪的标准CMOS工艺中的调节温度不敏感高压电荷泵
7. Differential PLL for Wireless Applications Using Differential CMOS LC-VCO and Differential Charge Pump [O] . Ayman ElSayed, Akbar Ali, M. I. Elmasry 1999

机译：差分pLL，适用于使用差分CmOs LC-VCO和差分电荷泵的无线应用

A fully differential CMOS charge pump and VCO at high frequency.

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