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首页> 外文学位 >Electrical characterization of thermally and mechanically exfoliated silicon films for flat panel display applications.
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Electrical characterization of thermally and mechanically exfoliated silicon films for flat panel display applications.

机译：用于平板显示器的热剥离和机械剥离的硅膜的电学特性。

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摘要

For the next generation of flat panel displays (FPDs), higher resolutions and sharp, full motion video are expected. To meet these requirements, high quality semiconductor material on glass substrates are a desirable way to fabricate the thin film transistors (TFTs) needed to drive the pixels and to quickly and precisely control the currents. Single crystal silicon films can be exfoliated onto Corning I737F glass substrates using ion-cutting techniques. Because the ion-cutting technique requires ion implantation through the film material, the electrical properties of the exfoliated film have to be examined to understand the behavior as it goes through temperature cycling inherent in the TFT fabrication process. After the film exfoliation, Hall effect, hot probe and four point probe measurements are used along with layer by layer etching to get a picture of the carrier depth distribution. The electrical properties of mechanically exfoliated and thermally exfoliated films are compared and discussed in the context of using these for MOSFETs. Finally, p-MOSFETs are fabricated and the transistor parameters such as leakage current, subthreshold slope, on/off current ratio and mobility compare and contrasted with MOSFETs made from bulk silicon. The mechanically exfoliated films show superior performance with respect to the p-MOSFET off-state, drain to source leakage current compared to the thermally exfoliated films. This difference is attributed to the lower temperature the mechanically exfoliated film is subjected to even before film delamination. The temperature difference of the exfoliation temperatures is responsible for a higher density of oxide precipitates in the thermally exfoliated film which leads to higher leakage currents.
机译：对于下一代平板显示器（FPD），期望有更高的分辨率和清晰的全动态视频。为了满足这些要求，玻璃基板上的高质量半导体材料是制造驱动像素并快速精确地控制电流所需的薄膜晶体管（TFT）的一种理想方式。可使用离子切割技术将单晶硅膜剥离到Corning I737F玻璃基板上。由于离子切割技术需要通过薄膜材料进行离子注入，因此必须检查剥离薄膜的电性能，以了解薄膜经过TFT制造过程中固有的温度循环时的行为。膜剥离后，使用霍尔效应，热探针和四点探针测量以及逐层蚀刻，以获取载流子深度分布的图像。比较了机械剥离膜和热剥离膜的电性能，并在将其用于MOSFET的背景下进行了讨论。最后，制造了p-MOSFET，并与由体硅制成的MOSFET进行了比较，并比较了诸如漏电流，亚阈值斜率，开/关电流比和迁移率等晶体管参数。与热剥离膜相比，机械剥离膜相对于p-MOSFET截止状态表现出优异的性能，漏源漏电流。该差异归因于甚至在膜分层之前机械剥离的膜经受的较低温度。剥离温度的温差是造成热剥离膜中氧化物沉淀物密度更高的原因，这导致更高的泄漏电流。

著录项

  • 作者

    Lu, Felix Paul.;

  • 作者单位

    University of California, San Diego.;

  • 授予单位 University of California, San Diego.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 215 p.
  • 总页数 215
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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