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首页> 外文学位 >Structure and Electronic Properties of Crystalline and Amorphous Zinc Indium Tin Oxide Thin Films.
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Structure and Electronic Properties of Crystalline and Amorphous Zinc Indium Tin Oxide Thin Films.

机译：晶体和非晶态锌铟锡氧化物薄膜的结构和电子性能。

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摘要

The local structures and surface electronic properties of crystalline (c-) and amorphous (a-) Zn and Sn codoped In2O3 (ZITO) films were studied. X-ray absorption spectroscopy (XAS) measurements confirm that Zn and Sn dopants occupy In sites in the bixbyite structure of c-ZITO. Also, Zn dopants are generally under-coordinated and some compensated Sn dopants are over-coordinated, as demonstrated by the trend in coordination numbers (CN) of CNSn>CNIn>CNZn. Aliovalent Sn dopants form Frank-Kostlin clusters, &parl0;2Sn•InO'' i&parr0;x , which can act as donors when reduced.;XAS and anomalous X-ray scattering studies on a-ZITO show that the local structure in a-ZITO is somewhat different than that in c-ZITO, particularly around Zn. The Zn-O bond length is significantly smaller than in c-ZITO and Zn is 4-fold coordinated. The smaller coordination numbers in a-ZITO follow the same trend as in c-ZITO. Unlike in c-ZITO, variations in the Sn/Zn ratio do not alter the electrical properties of a-ZITO, although variations in deposition oxygen pressure do. The 3-D geometrical arrangement linking local structure units seems to play a key role in charge balancing ZITO.;As measured by in situ grazing incidence wide angle X-ray scattering, ZITO crystallizes at a higher temperature than In2 O3 and Sn-doped In2O3. The difference is attributed to a higher activation energy, which may result from the unique structure around Zn in a-ZITO. Increasing the codoping level consistently increases crystallization temperature. For a given codoping level, the crystallization temperature during deposition is lower than that during post-deposition annealing.;X-ray and ultraviolet photoelectron spectroscopy measurements show that a-ZITO and c-ZITO thin films have similar surface electronic properties. In situ a-ZITO and c-ZITO films have low ionization potentials that are similar to In2O3. However, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials that are similar to ITO and match well with previous results on air-exposed surfaces. Lastly, a parallelogram plot of work function versus Fermi level shows that a wider range of work functions is achievable in ZITO materials than in Sb-doped SnO2, Al-doped ZnO, and Sn-doped In2O3.
机译：研究了晶体（c-）和非晶（a-）Zn和Sn共掺杂In2O3（ZITO）薄膜的局部结构和表面电子性能。 X射线吸收光谱（XAS）测量证实，Zn和Sn掺杂剂占据了c-ZITO的方铁矿结构中的In位。而且，如CNSn＞ CNIn＞ CNZn的配位数（CN）的趋势所证明的，Zn掺杂剂通常配位不足，而某些补偿的Sn掺杂剂配位过度。铝价锡掺杂物形成Frank-Kostlin团簇＆parl0; 2Sn•InO''i＆parr0; x，当还原时可以充当施主。与c-ZITO有所不同，尤其是在Zn附近。 Zn-O键的长度显着小于c-ZITO，并且Zn的4倍配位。 a-ZITO中较小的配位数遵循与c-ZITO中相同的趋势。与c-ZITO不同，Sn / Zn比的变化不会改变a-ZITO的电性能，尽管沉积氧压会发生变化。连接局部结构单元的3-D几何排列似乎在ZITO电荷平衡中起关键作用。;通过原位掠射入射广角X射线散射测量，ZITO的结晶温度高于In2 O3和掺Sn的In2O3 。差异归因于较高的活化能，这可能是由于a-ZITO中Zn周围独特的结构导致的。共掺杂水平的增加始终提高结晶温度。对于给定的共掺杂水平，沉积期间的结晶温度低于沉积后退火期间的结晶温度。X射线和紫外光电子光谱法测量表明，a-ZITO和c-ZITO薄膜具有相似的表面电子性质。原位a-ZITO和c-ZITO膜具有类似于In2O3的低电离势。但是，干式空气退火原位膜，非原位膜和块状陶瓷具有更高的电离电势，类似于ITO，并且与暴露于空气的表面上的先前结果非常吻合。最后，功函数与费米能级的平行四边形图显示，与掺Sb的SnO2，掺Al的ZnO和掺Sn的In2O3相比，ZITO材料可实现更大范围的功函数。

著录项

  • 作者

    Proffit, Diana Elizabeth.;

  • 作者单位

    Northwestern University.;

  • 授予单位 Northwestern University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 187 p.
  • 总页数 187
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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