Metal Oxide Semiconductors: Direct Photopatterning of Solution–Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors—A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides (Adv. Mater. Interfaces 15/2018)

著录项

• 来源
  《Advanced materials interfaces》 |2018年第15期|共1页
• 作者

  Sanctis Shawn; Hoffmann Rudolf C.; Bruns Michael; Schneider J?rg J.;

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• 作者单位

  Fachbereich ChemieTechnische Universit?t DarmstadtAlarich‐Weiss‐Stra?e 12 64287 Darmstadt Germany;

  Fachbereich ChemieTechnische Universit?t DarmstadtAlarich‐Weiss‐Stra?e 12 64287 Darmstadt Germany;

  Institute for Applied Materials – Energy Storage Systems (IAM‐ESS)Karlsruhe Institute of Technology (KIT)Hermann‐von‐Helmholtz‐Platz 1 D‐76344 Eggenstein‐Leopoldshafen Germany;

  Fachbereich ChemieTechnische Universit?t DarmstadtAlarich‐Weiss‐Stra?e 12 64287 Darmstadt Germany;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类 特种结构材料;
• 关键词

  indium zinc oxide; molecular precursors; photopatterning; thin film transistor; zinc tin oxide;

  机译：氧化铟锌;分子前体;photopterning;薄膜晶体管;氧化锌锌;