首页> 外文学位 >High frequency voltage controlled ring oscillators in standard CMOS.
【24h】

High frequency voltage controlled ring oscillators in standard CMOS.

机译:标准CMOS中的高频压控环形振荡器。

获取原文
获取原文并翻译 | 示例

摘要

This dissertation presents a study of high-frequency low-noise CMOS voltage-controlled ring oscillators. The objective is to understand the limitations of voltage-controlled ring oscillators that are implemented in standard CMOS technologies when they are extended to multiple gigahertz applications. This study explores the maximum frequency limitations and the associated noise performance levels of ring oscillators that can be constructed using different design styles. Important metrics also include the tuning range, linearity of frequency-control characteristics, stability across temperature and process corner variations, and power consumption of the circuits. Simplicity and the low cost provide the main motivation for selecting a ring structure over competing LC-based architectures.;To fulfill the requirements of this study, various ring and LC oscillators were designed in several state-of-the-art CMOS processes. A multiple-pass differential architecture along with a saturated-type delay-stage utilizing cross-coupled transistors has been found to have promising characteristics. A new ring oscillator design, which mixes the analog and digital elements, is proposed to solve the problems related with the single-ended control and the high gain of conventional ring oscillator designs. By using these techniques, it may become possible to extend the applications of ring VCOs into some areas that previously required the performance of LC oscillators.
机译:本文提出了一种高频低噪声CMOS压控环形振荡器的研究。目的是了解将标准CMOS技术扩展到多个千兆赫应用时实现的压控环形振荡器的局限性。这项研究探索了可以使用不同设计风格构造的环形振荡器的最大频率限制和相关的噪声性能水平。重要指标还包括调谐范围,频率控制特性的线性,温度和工艺拐角变化的稳定性以及电路的功耗。简单和低成本是在竞争的基于LC的架构上选择环形结构的主要动机。为了满足本研究的要求,在几种最新的CMOS工艺中设计了各种环形和LC振荡器。已经发现利用交叉耦合晶体管的多通差分架构以及饱和型延迟级具有令人鼓舞的特性。为了解决与传统环形振荡器设计的单端控制和高增益有关的问题,提出了一种混合了模拟和数字元素的新型环形振荡器设计。通过使用这些技术,有可能将环形VCO的应用扩展到以前需要LC振荡器性能的某些区域。

著录项

  • 作者

    Eken, Yalcin Alper.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 257 p.
  • 总页数 257
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号