• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Control of Staebler -Wronski defects in hydrogenated amorphous silicon for the development of low cost solar cell technology.
【24h】

Control of Staebler -Wronski defects in hydrogenated amorphous silicon for the development of low cost solar cell technology.

机译：为开发低成本太阳能电池技术，控制氢化非晶硅中的Staebler -Wronski缺陷。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hydrogenated amorphous silicon (a-Si:H), one of the least expensive solar cell materials, possess an excellent ecological balance sheet. However, the ecological and economic promise of a-Si:H solar cells is limited by the light induced degradation of its electronic properties known as the Staebler-Wronski Effect (SWE). Numerous models have been proposed to explain (and thus control) SWE, with most based on the breaking of weak silicon bonds to create neutral dangling bonds (D0). Evidence, however, has been found for the presence of other defects but such defects have not been characterized in detail. Thus, the predominant application of single defect models has limited the understanding of SWE and the ability to improve a-Si:H materials. This and the lack of correlation between the properties of a-Si:H thin films and corresponding solar cells have had a serious negative effect on the systematic improvement of a-Si:H solar cell performance. This thesis addresses several important issues regarding the properties of protocrystalline a-Si:H materials, the most stable a-Si:H, and their incorporation in cell structures. To improve the understanding of SWE several issues regarding the presence of multiple light induced defects are addressed with detailed studies on thin films. Utilizing AFM, TEM, and real time spectroscopic ellipsometry to track the phase of Si:H, the evolutionary nature (protocrystallinity) and substrate dependence of its growth were further characterized. This allowed highly controlled cell structures to be prepared in which the contributions of the carrier recombination from the p/i interface regions and the bulk could be identified and their effects on cell characteristics separated. For the first time direct correlations between the 1 sun light induced changes in films and solar cells were established in their kinetics at different temperatures. The presence of both 'fast' and 'slow' light induced defects were identified in these degradation kinetics from two clear regimes of degradation for both Fill Factors (FF) in cells and electron mobility-lifetime (mutau) products in thin films. Evidence was found in these studies that not only does the ratio of 'fast' to 'slow' defect states depend on the degradation temperature but also that the 'fast' defects are more negatively charged. A novel approach was developed in analyzing the subgap absorption spectra, alpha(E), extensively used to characterize the light induced defects in a-Si:H. (Abstract shortened by UMI.).
机译：氢化非晶硅（a-Si：H）是最便宜的太阳能电池材料之一，具有出色的生态资产负债表。但是，a-Si：H太阳能电池的生态和经济前景受到光诱导的电子特性退化的限制，这种退化被称为Staebler-Wronski效应（SWE）。已经提出了许多模型来解释（从而控制）SWE，其中大多数模型基于弱硅键的断裂以产生中性的悬空键（D0）。然而，已经发现存在其他缺陷的证据，但是尚未详细表征这种缺陷。因此，单一缺陷模型的主要应用限制了对SWE的理解以及改进a-Si：H材料的能力。这种现象以及a-Si：H薄膜的特性与相应的太阳能电池之间缺乏相关性，对a-Si：H太阳能电池性能的系统改善产生了严重的负面影响。本论文解决了与原晶a-Si：H材料的特性，最稳定的a-Si：H及其在细胞结构中的结合有关的几个重要问题。为了提高对SWE的理解，通过对薄膜的详细研究解决了有关多个光致缺陷的存在的若干问题。利用原子力显微镜，透射电镜和实时光谱椭偏仪跟踪Si：H的相，进一步表征了其生长的演化性质（原晶性）和衬底依赖性。这允许制备高度受控的细胞结构，其中可以鉴定出来自p / i界面区域和主体的载体重组的贡献，并分离了它们对细胞特性的影响。首次在薄膜和太阳能电池在不同温度下的动力学之间建立了由太阳光引起的薄膜变化与太阳能电池之间的直接相关性。在这些降解动力学中，从细胞中的填充因子（FF）和薄膜中的电子迁移率-寿命（mutau）产物的两种清晰的降解方式中识别出“快速”和“慢速”光诱导缺陷的存在。在这些研究中发现，不仅“快”缺陷与“慢”缺陷状态的比率取决于降解温度，而且“快”缺陷的带负电荷更大。开发了一种用于分析亚能隙吸收光谱α（E）的新颖方法，该方法广泛用于表征a-Si：H中的光致缺陷。 （摘要由UMI缩短。）。

著录项

  • 作者

    Pearce, Joshua M.;

  • 作者单位

    The Pennsylvania State University.;

  • 授予单位 The Pennsylvania State University.;
  • 学科 Engineering Materials Science.;Energy.;Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 201 p.
  • 总页数 201
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号