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The radio-frequency characteristics of insulated submicron-gate III-N heterostructure field-effect transistors.

机译：绝缘亚微米栅极III-N异质结构场效应晶体管的射频特性。

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摘要

This dissertation describes large-signal radio-frequency (rf) performance of novel III-N Insulated Gate Heterostructure Field-Effect Transistors (IGHFETs), with particular focus on submicron gate design. It demonstrates that the suppression of the gate leakage currents in the IGHFETs results in the overall improved rf device performance as compared to the conventional Schottky-gate HFETs.; Unique properties of GaN-based devices, such as high electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance (when grown over SiC or bulk AlN substrates) make them extremely promising for high-power high-temperature applications. An AlGaN/GaN Heterostructure Field Effect Transistor (HFET) is one of the most promising electronic devices, which has been a topic of intensive investigations since the first report in 1991. The III-N based HFET can deliver the rf powers as high as 10W/mm, which is about 10 times higher than those of GaAs based devices. However, the HFET high-power performance is limited by high gate leakage currents. Novel Insulated Gate HFET design resolves this problem by introducing thin dielectric layer between the gate and the channel, which reduces the gate current by several orders of magnitude. The combination of insulated gate design and submicron gate geometry should result in further improvement in the power gain and operation frequencies. However, the rf performance parameters of the submicron gate IGHFETs, have not been studied before. This dissertation presents for the first time the detailed study of small- and large-signal rf characteristics of the IGHFETs. We show both experimentally and theoretically that for the III-N IGHFETs, such key performance parameters as the cut-off frequencies, power gain and power added efficiency are the same as for conventional HFETs, whereas the saturation power, large-signal linearity and rf power stability are superior.
机译：本文介绍了新型III-N型绝缘栅异质结构场效应晶体管（IGHFET）的大信号射频（rf）性能，重点研究了亚微米栅设计。它表明，与传统的肖特基栅极HFET相比，对IGHFET中栅极漏电流的抑制导致整体射频器件性能的改善。 GaN基器件的独特特性，例如高电子迁移率和饱和速度，异质结界面处的高薄层载流子浓度，高击穿场和低热阻（当在SiC或块状AlN衬底上生长时）使其极有希望用于电力高温应用。 AlGaN / GaN异质结构场效应晶体管（HFET）是最有前途的电子器件之一，自1991年首次报告以来就一直是深入研究的主题。基于III-N的HFET可以提供高达10W的射频功率/ mm，比基于GaAs的器件高约10倍。但是，HFET的高功率性能受到高栅极漏电流的限制。新颖的绝缘栅HFET设计通过在栅和沟道之间引入薄介电层解决了这一问题，从而将栅电流降低了几个数量级。绝缘栅设计和亚微米栅几何形状的结合应进一步提高功率增益和工作频率。但是，亚微米栅极IGHFET的射频性能参数之前尚未研究过。本文首次提出了IGHFET的小信号和大信号射频特性的详细研究。我们从实验和理论上都表明，对于III-N型IGHFET，截止频率，功率增益和功率附加效率等关键性能参数与常规HFET相同，而饱和功率，大信号线性度和rf电源稳定性优越。

著录项

  • 作者

    Tarakji, Ahmad Houssam.;

  • 作者单位

    University of South Carolina.;

  • 授予单位 University of South Carolina.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 83 p.
  • 总页数 83
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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