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首页> 外文学位 >Infrared studies of the rotational motion of interstitial hydrogen and the vibrational lifetimes of hydrogen-decorated lattice defects in silicon.
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Infrared studies of the rotational motion of interstitial hydrogen and the vibrational lifetimes of hydrogen-decorated lattice defects in silicon.

机译：间隙氢的旋转运动和硅中氢修饰晶格缺陷的振动寿命的红外研究。

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摘要

This dissertation describes new studies of interstitial H2 in Si by vibrational spectroscopy and uniaxial stress methods. A new vibrational line for the HD molecule in Si was observed at elevated temperature (T > 20K). The interpretation of this new line leads to the conclusion that the H 2 molecule is a nearly free rotor. The 3618.4 and 2642.6 cm−1 lines that are seen in Si that contains H and D, are assigned to interstitial ortho-H2 and para-D2. This conclusion was confirmed by uniaxial stress experiments performed for H2 and D 2 in Si. The small isotope dependence of the stress induced line splittings is also explained naturally by our model for interstitial H2. Furthermore, our results also provide a new explanation for the behavior of complexes with the H2, HD, or D2 molecules bound to interstitial oxygen in Si.; In another project, the lifetimes of the vibrational modes of H- and D-decorated lattice defects were studied by measuring the vibrational line widths using high-resolution spectroscopy. The experimental results provide lower limits for the vibrational lifetimes of Si-H and Si-D stretching modes for several defects with different structures. The lifetimes are found to be strongly dependent on the defect structure. A comparison of the lifetimes of corresponding D- and H-decorated lattice defects shows that the lifetime of a D-containing defect is typically longer than that of the corresponding H-containing defect, contrary to conventional wisdom, but also that interesting exceptions to this rule are possible.
机译：本文利用振动光谱法和单轴应力法描述了Si中间隙H 2 的新研究。在高温下（T> 20K），观察到了硅中HD分子的新振动线。对这条新线的解释得出结论，H 2 分子是几乎自由的转子。在包含H和D的Si中看到的3618.4和2642.6 cm −1 线被分配给填隙正交Or-H 2 和para-D 2 < / sub>。通过对Si中H 2 和D 2 进行的单轴应力实验证实了这一结论。间隙诱导H 2 模型也自然地解释了应力引起的线裂的小同位素依赖性。此外，我们的结果也为与H 2 ，HD或D 2 分子键合到Si中的间隙氧的配合物的行为提供了新的解释。在另一个项目中，通过使用高分辨率光谱法测量振动线的宽度，研究了H和D装饰的晶格缺陷的振动模式的寿命。实验结果为具有不同结构的几种缺陷的Si-H和Si-D拉伸模式的振动寿命提供了下限。发现寿命在很大程度上取决于缺陷结构。与相应的D和H装饰的晶格缺陷的寿命比较表明，与常规观点相反，含D的缺陷的寿命通常比相应的含H的缺陷的寿命更长，但与此相反，有趣的是，规则是可能的。

著录项

  • 作者

    Chen, E. Elinor.;

  • 作者单位

    Lehigh University.;

  • 授予单位 Lehigh University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 170 p.
  • 总页数 170
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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