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Gallium arsenide-based epitaxial structures for heterojunction bipolar transistors with increased efficiency.

机译：用于异质结双极晶体管的砷化镓基外延结构具有更高的效率。

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摘要

AlGaAs/GaAs/GaAs and GaInP/GaAs/GaAs Npn heterojunction bipolar transistors (HBTs) are now in widespread use in microwave power amplifiers. In this Dissertation, improved HBT structures are presented to address issues currently problematic for these devices: high turn-on voltage, high offset and knee voltages, and saturation charge storage.; For a variety of applications, particularly operation with low power supply voltage and reduced power dissipation, it would be desirable to have a smaller value of turn-on voltage (VBE). In this Dissertation, the design of reduced VBE GaAs-based HBTs was investigated using GaInNAs in the base region. In order to gain understanding of the effect of nitrogen on these devices, GaInNAs-base HBTs with varying amounts of nitrogen, were fabricated and characterized which yielded devices with varying reductions in VBE. In devices with a large reduction in VBE of 0.4 V the minority carrier diffusion length (Ldiff) was reduced to 0.1 μm, which is considerably lower than that of GaAs (Ldiff = 0.5 μm). This resulted in lower current gain and longer base transit time. Devices with a smaller reduction of VBE of 90 mV also had a reduced Ldiff of 0.4 μm. However, with graded composition in the base, the minority carrier transport of GaInNAs-base HBTs was significantly improved. The resulting HBT had an 80 mV VBE with larger current gain and comparable fT to the GaAs device.; The second part of this Dissertation deals with the reduction of the offset (VCE,sat) and knee (Vk) voltages as well as saturation charge storage in HBTs fabricated with the GaInP/GaAs material system. Reduced HBT offset and knee voltages are important to improve the power amplifier efficiency. Switching mode power amplifiers are particularly attractive for high efficiency applications, but to improve their performance it is necessary to reduce the HBT saturation charge storage. It is shown in this Dissertation that HBT structures using a 100 Å thick layer of GaInP between the GaAs base and collector layers are effective in reducing VCE,sat to 30 mV and Vk to 0.3 V (while for conventional HBTs VCE,sat = 0.2 V and Vk = 0.5 V are typical). A 5-fold reduction in saturation charge storage is simultaneously obtained.
机译：AlGaAs / GaAs / GaAs和GaInP / GaAs / GaAs Npn异质结双极晶体管（HBT）现在广泛用于微波功率放大器中。在本文中，提出了改进的HBT结构来解决这些设备当前存在的问题：高导通电压，高失调电压和拐点电压以及饱和电荷存储。对于各种应用，特别是在低电源电压和降低功耗的情况下，希望有较小的开启电压值（ V BE ） 。本论文利用GaInNAs在基区中研究了还原的 V BE GaAs基HBT的设计。为了了解氮对这些器件的影响，制造并表征了具有不同氮含量的基于GaInNAs的HBT，并生成了具有 V BE 。在 V BE 大大降低0.4 V的器件中，少数载流子扩散长度（ L diff ）为降低至0.1μm，远低于GaAs（ L diff = 0.5μm）。这导致较低的电流增益和较长的基本传输时间。 V BE 减小幅度较小的设备，其90 mV的 L diff 减小幅度为0.4μm。然而，随着碱基组成的分级，GaInNAs碱基HBT的少数载流子传输得到了显着改善。产生的HBT具有80 mV的 V BE ，具有更大的电流增益，与GaAs器件的 f T 相当。 ;本论文的第二部分讨论了偏移量（ V CE，sat ）和膝盖（ V k V CE，sat 降低至30 mV和 V k 至0.3 V（而常规HBT的 V CE，sat = 0.2 V和 V k = 0.5 V是典型值）。同时获得了5倍的饱和电荷存储减少。

著录项

  • 作者

    Welty, Rebecca Jane.;

  • 作者单位

    University of California, San Diego.;

  • 授予单位 University of California, San Diego.;
  • 学科 Engineering Electronics and Electrical.; Physics General.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 144 p.
  • 总页数 144
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;物理学;工程材料学;
  • 关键词

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