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Fabrication of Cu2ZnSnSe4 Thin-film Solar Cells by a Two-stage Process.

机译：两步法制备Cu2ZnSnSe4薄膜太阳能电池。

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摘要

Copper zinc tin selenide (Cu2ZnSnSe4 or CZTSe) is a quaternary compound semiconductor material that has attained more and more attention for thin film photovoltaic applications. CZTSe is only comprised of abundant and non-toxic elements. People have concerns about availability and cost of indium from CIGS and tellurium from CdTe, also about cadmium's toxicity. These concerns have promoted CZTSe as an alternative thin film solar cell material. The major issues about CZTSe absorber fabrication are: tin loss during selenization process and existence of secondary phases. Recent improvements of CZTSe absorber have increased the efficiency of CZTSe thin film solar cell to 9.7% in laboratory, and this was accomplished by using H2Se as selenium source in a "two-stage" process. [1] However "one-stage" vacuum co-evaporation technique is still the most popular technique for CZTSe thin-film solar cells fabrication.;In this research, Cu2ZnSnSe4 thin-film solar cells have been fabricated by using a two-step rapid thermal selenization process. The first step selenization is operated at 375°, a relatively low annealing temperature, which helps avoiding the most common issue of tin loss. The second step selenization is carried out at a higher annealing temperature, 400° to 500°, at where the formation of CZTSe quaternary compound can be completed, and fewer secondary phases remain in the CZTSe absorber bulk. A specially designed metallic precursor stacks deposition order has been developed to inhibit tin loss and zinc loss during selenization. Vacuum co-evaporation technique is not feasible to mass production, due to facility difficulty and bad uniformity. And H2Se is toxic and dangerous. We have developed these metallic precursor stacks vacuum deposition process and two-step selenium vapor selenization process. We believe this technique is more suitable for potential mass production in future.;The properties of CZTSe thin-films and the performance of CZTSe thin-film solar cells have been characterized using techniques, including J-V, Raman spectroscopy, spectral response, and SEM/EDS. The best performance CZTSe thin-film solar cell that have been accomplished, has an open circuit voltage of 0.42 volt, shirt circuit current densities of 14.5 mA/cm2, fill factor of 47%, and efficiency of 2.86%.;1. Characterization of defects in 9.7% efficient Cu2ZnSnSe 4-CdS-ZnO solar cells, G. Brammertz, M. Buffiere, S. Oueslati, H. ElAnzeery, K. Ben Messaoud, Appl. Phys. Lett. 103, 163904 (2013).
机译：硒化铜锌锡（Cu2ZnSnSe4或CZTSe）是一种四元化合物半导体材料，在薄膜光伏应用中受到越来越多的关注。 CZTSe仅包含丰富且无毒的元素。人们担心CIGS的铟和CdTe的碲的可用性和成本，以及镉的毒性。这些担忧促使CZTSe成为薄膜太阳能电池的替代材料。关于CZTSe吸收体制造的主要问题是：硒化过程中锡的损失和第二相的存在。 CZTSe吸收剂的最新改进已在实验室中将CZTSe薄膜太阳能电池的效率提高到9.7％，这是通过在“两阶段”过程中使用H2Se作为硒源来实现的。 [1]然而，“一级”真空共蒸发技术仍然是CZTSe薄膜太阳能电池制造中最流行的技术。在本研究中，Cu2ZnSnSe4薄膜太阳能电池是通过两步快速制造的。热硒化工艺。第一步硒化在相对较低的退火温度375°下进行，这有助于避免最常见的锡损失问题。硒化的第二步是在较高的退火温度（400°至500°）下进行的，在该温度下可以完成CZTSe季铵化合物的形成，并且在CZTSe吸收剂本体中保留的次级相更少。已经开发出一种特别设计的金属前驱体堆叠沉积顺序，以抑制硒化期间锡损失和锌损失。由于设备困难和均匀性差，真空共蒸发技术不适用于批量生产。硫化氢有毒且危险。我们已经开发了这些金属前驱体堆叠真空沉积工艺和两步硒蒸气硒化工艺。我们认为该技术更适合将来潜在的大规模生产。;已使用合资，拉曼光谱，光谱响应和SEM / SEM等技术对CZTSe薄膜的性能和CZTSe薄膜太阳能电池的性能进行了表征。 EDS。已完成的最佳性能的CZTSe薄膜太阳能电池具有0.42伏的开路电压，14.5 mA / cm2的上衣电路电流密度，47％的填充系数和2.86％的效率。 9.7％高效Cu2ZnSnSe 4-CdS-ZnO太阳能电池中缺陷的表征，G。Brammertz，M。Buffiere，S。Oueslati，H。ElAnzeery，K。Ben Messaoud，应用。物理来吧103，163904（2013）。

著录项

  • 作者

    Wang, Yejiao.;

  • 作者单位

    University of South Florida.;

  • 授予单位 University of South Florida.;
  • 学科 Electrical engineering.;Energy.;Alternative Energy.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 96 p.
  • 总页数 96
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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