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首页> 美国政府科技报告 >Novel two-stage selenization methods for fabrication of thin-film CIS cells and submodules. Final subcontract report, March 1, 1993--March 31, 1995
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Novel two-stage selenization methods for fabrication of thin-film CIS cells and submodules. Final subcontract report, March 1, 1993--March 31, 1995

机译：用于制造薄膜CIs电池和子模块的新型两阶段硒化方法。最终分包合同报告，1993年3月1日 - 1995年3月31日

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This is the Phase 11 Final Technical Report of the subcontract titled (open quotes)Novel Two-Stage Selenization Methods for Fabrication of Thin Film CIS Cells and Submodules.(close quotes) The general objectives of the program are the development of a cost-effective, large-area process for CIS film deposition, optimization of the various layers forming the CIS device structure, and fabrication of high efficiency submodules using these optimized device components. During this research period, growth parameters of ZnO window layers were varied to optimize their electrical and optical properties. Investigation of the chemical interactions between the glass substrates, Mo layers and the selenization atmosphere revealed that the nature of the glass/Mo substrate greatly influenced the quality of the solar cells fabricated on them. Moderate amounts of sodium diffusing from the soda-lime glass substrate into the CIS film improved the efficiencies of the solar cells fabricated on such films. Mo layers allowing excessive Na diffusion through them, on the other hand, reacted excessively with the H(sup 2)Se environment and deteriorated the solar cell performance. Addition of Ga into the CIS layers by the two-stage selenization technique yielded graded absorber structures with higher Ga content near the Mo/absorber interface. Cu-rich CIS layers were grown with grain sizes of larger than 5 (mu)m. In the Phase I Annual Report large area CIS submodules with efficiencies of about 3% were reported. During the present Phase II program 1 ft(sup 2) size CIS submodule efficiency was improved to 7%. Smaller area submodules with efficiencies as high as 9.79% were also fabricated using CIS layers obtained by the H(sub 2)Se selenization method. The processing yield of the devices based on a non-vacuum CIS deposition approach was improved and solar cells with efficiencies greater than 10% were fabricated.

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