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MEMS thin film teflon electret condenser microphones.

机译：MEMS薄膜聚四氟乙烯驻极体电容麦克风。

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摘要

The goal of this thesis is to develop miniature, inexpensive, high-quality, self-biasing electret condenser microphones that are fabricated using Micro Electro, Mechanical Systems (MEMS) technology. These MEMS electret microphones are to be used in any application where a conventional electret microphone can be used and in new acoustic sensing applications where current microphone technology cannot be applied (such as in smart cards of the future or in new applications where it is advantageous to integrate microelectronics with the microphone).; To accomplish this, a MEMS-compatible Teflon electret technology has been developed. The electret material used is thin film Teflon AF. A custom-built pulsed electron gun, called the Back-Lighted Thyratron, is used for charge implantation. Thermal annealing is used to stabilize the implanted charge. An electric field compensation method is used to measure the electret charge density. The electrets obtained have stable charge densities on the order of 10−5 to 10−4 C/m2.; Two main types of MEMS thin film Teflon electret condenser microphones have been successfully fabricated and tested. Both microphones use silicon substrates and are fabricated using bulk-micromachining techniques. Each microphone is manufactured as a two piece structure, comprising a microphone membrane unit having an extremely thin diaphragm and a perforated microphone backplate unit. When one is placed on top of the other, the two units form a highly reliable, inexpensive microphone that can produce a signal without the need for external biasing. One type of microphone uses a silicon nitride/Teflon AF composite diaphragm, while the other type uses a Parylene C/Teflon AF composite diaphragm. Both microphones use the same perforated silicon nitride/Parylene C composite backplate.; Both types of millimeter-scale electret microphones have very low stray capacitance, are self-biasing, mass producible, arrayable, integratable with on-chip electronics, structurally simple and extremely stable over time in the ordinary environment. The dynamic range is from less than 30 dB to above 110 dB SPL (re. 20 μpa) and the open-circuit sensitivities obtained range from 3.5–44 mV/Pa over the frequency range 100 Hz–13 kHz. The total harmonic distortion of both devices is less than 2% at 110 dB SPL, 1 kHz.
机译：本文的目的是开发使用微电子机械系统（MEMS）技术制成的微型，廉价，高质量，自偏置驻极体电容式麦克风。这些MEMS驻极体麦克风将用于可使用常规驻极体麦克风的任何应用中，以及无法应用当前麦克风技术的新型声感测应用中（例如，在未来的智能卡中或在有利于以下方面的新应用中）：将微电子器件与麦克风集成在一起；为此，已经开发出了与MEMS兼容的特氟龙驻极体技术。所使用的驻极体材料是薄膜Teflon AF。定制的脉冲电子枪称为Back-Lighted Thyratron，用于电荷注入。热退火用于稳定注入的电荷。电场补偿方法用于测量驻极体电荷密度。获得的驻极体具有稳定的电荷密度，为约10 -5 至10 -4 C / m 2 。 MEMS薄膜特富龙驻极体电容麦克风的两种主要类型已成功制造和测试。两个麦克风均使用硅衬底，并使用体微机械加工技术制造。每个麦克风被制造为两件式结构，包括具有极薄隔膜的麦克风膜片单元和带孔的麦克风背板单元。当一个放在另一个之上时，这两个单元形成了一个高度可靠，便宜的麦克风，无需外部偏置即可产生信号。一种类型的麦克风使用氮化硅/ Teflon AF复合膜片，而另一种类型则使用聚对二甲苯C / Teflon AF复合膜片。两个麦克风都使用相同的多孔氮化硅/聚对二甲苯C复合背板。两种类型的毫米级驻极体麦克风均具有非常低的杂散电容，具有自偏置，可量产，可排列，可与片上电子设备集成的特性，在普通环境中结构简单且随时间稳定。动态范围从小于30 dB到大于110 dB SPL（re。20μpa），并且在100 Hz–13 kHz频率范围内，开路灵敏度范围为3.5–44 mV / Pa。在110 dB SPL（1 kHz）下，两个器件的总谐波失真均小于2％。

著录项

  • 作者

    Hsieh, Wen Hsuan.;

  • 作者单位

    California Institute of Technology.;

  • 授予单位 California Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 135 p.
  • 总页数 135
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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