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Shadow mask selective area molecular beam epitaxy for applications in device processing and integration.

机译：荫罩选择性区域分子束外延技术，用于器件处理和集成。

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摘要

This thesis describes the development of a shadow mask selective area molecular beam epitaxy (MBE) technique and its applications in device structure processing and integration.; Two kinds of mask fixtures were designed and fabricated to perform shadow mask selective area epitaxy (SAE) during molecular beam epitaxial growth. The ex situ mask fixture requires the mask to be placed and removed outside the growth environment during the mounting and removing of the substrate. The in situ mask fixture allows the mask to be placed and removed inside the vacuum chamber. Therefore patterned layer growth can be performed within the structure wherever desired and multiple step SAE can be performed for complex device structures. The growth behaviors of the shadow mask SAE employing these fixtures were investigated and presented.; The implementations of the shadow mask SAE technique on device structure processing and integration were demonstrated by the in situ processing of Au/CdTe detector-array-like structures for application in HgCdTe detector array fabrication, and by the integration of different ZnCdSe quantum wells on a single GaAs or InP substrate for application in integration of red-green-blue (Zn,Cd,Mg)Se based light emitting diodes on single InP substrate. The in situ mask fixture was used in these applications.; The influence of the shadow mask SAE on material quality was studied by investigating the defect density of the patterned CdTe and ZnSe layers grown with the shadow mask. Similar defect density was observed from these patterned epilayers as from the flat epilayers, indicating that no deleterious effect on the material quality was caused by the use of shadow mask. However, we were unable to identify if there is any defect reduction effect by the use of shadow mask SAE as there is with the patterned-substrate SAE due to the limited growth area.; A wide range of characterization techniques such as Photoluminescence (PL), micro-PL, X-Ray Diffraction (XRD), Secondary Ion Mass Spectroscopy (SIMS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) were used in this research work to characterize the materials and device structures fabricated.
机译：本文介绍了荫罩选择性区域分子束外延（MBE）技术的发展及其在器件结构处理和集成中的应用。设计并制造了两种掩模固定装置，以在分子束外延生长期间执行荫罩选择性区域外延（SAE）。异位掩模固定装置需要在衬底的安装和去除过程中将掩模放置在生长环境之外并从中去除。原位面罩固定装置允许将面罩放置在真空室内并从中取出。因此，可以在需要的结构内执行图案化的层生长，并且可以对复杂的器件结构执行多步SAE。研究并介绍了使用这些固定装置的荫罩SAE的生长行为。通过原位处理Au / CdTe探测器阵列状结构以用于HgCdTe探测器阵列的制造，以及通过将不同的ZnCdSe量子阱集成在器件上，证明了荫罩SAE技术在器件结构处理和集成上的实现。单个GaAs或InP衬底，用于在单个InP衬底上集成基于红绿蓝（Zn，Cd，Mg）Se的发光二极管。在这些应用中使用了现场掩模固定装置。通过研究用荫罩生长的图案化CdTe和ZnSe层的缺陷密度，研究了荫罩SAE对材料质量的影响。从这些图案化的外延层观察到的缺陷密度与平坦的外延层相似，表明使用荫罩不会对材料质量产生有害影响。然而，由于生长区域的限制，我们无法确定使用荫罩SAE是否有任何减少缺陷的效果，就像使用图案化衬底SAE一样。在此使用了多种表征技术，例如光致发光（PL），微PL，X射线衍射（XRD），二次离子质谱（SIMS），扫描电子显微镜（SEM）和原子力显微镜（AFM）。研究工作以表征制造的材料和设备结构。

著录项

  • 作者

    Luo, Yuanyuan.;

  • 作者单位

    City University of New York.;

  • 授予单位 City University of New York.;
  • 学科 Chemistry Inorganic.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 250 p.
  • 总页数 250
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无机化学;无线电电子学、电信技术;
  • 关键词

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