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首页> 外文学位 >Metal/hydrogenated amorphous silicon/crystalline silicon hetero-structure with directional breakdown: A low-cost, high-density, diode array approach to PROMs.
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Metal/hydrogenated amorphous silicon/crystalline silicon hetero-structure with directional breakdown: A low-cost, high-density, diode array approach to PROMs.

机译：具有方向性击穿的金属/氢化非晶硅/晶体硅异质结构：一种低成本，高密度的PROM二极管阵列方法。

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摘要

This thesis reports a directional breakdown behavior in metal/intrinsic a-Si:H/n c-Si structures. This discovery has potential to make high density, low cost programmable read only memory (PROM) devices. In the thesis different technologies of conventional PROM devices are given as comparison.;In this thesis we studied the process and characterization of a-Si:H material. The a-Si:H film is deposited using rf PECVD on an electrode driven substrate. Film quality is mainly characterized by PL. The film property is strongly affected by the processing parameters such as power, pressure and temperature. We can see the difference in film quality from the PL signal presented in this thesis. Substrate materials also play a big role in determining the film growth. A mixed phase of uc-Si, a-Si and a-Si:H with different bandgap can co-exists if film grows on glass or uc-Si substrate.;Devices fabricated under different conditions are given in this thesis. A 105 forward current gain is obtained after an electrical stress of large forward bias. Device computer simulation tool analysis of microelectronic and photonic structures (AMPS) is used intensively to help understanding the transport mechanism and guide our design. A model using carrier hopping through the defects states is used to explain the breakdown mechanism. Also demonstrated in this thesis, we can link the material property with device performance using AMPS program. The modeling work explained the space charge limited current due to electron trapping in the defect states and model the trend of thickness and defect density effect in the device before breakdown.;We also demonstrated in this thesis that device as small as 1 x 1 um 2 is able to be fabricated. This work builds up the evidence of making potential large array PROMs based on this technique. ECR PECVD is used to deposit SiOx as the field oxide. The process flow and device characteristic is given in the thesis.;In attempting to further reduce the cost of making PROMs, we explore possibility of making the device on glass substrate. Three different ways of making poly silicon n layer are discussed in the thesis as well as their conductivity, UV and X-ray diffraction measurement. Finally we report a success in making the device on LPCVD poly silicon substrate.
机译：本文报道了金属/本征a-Si：H / n c-Si结构中的定向击穿行为。这一发现具有制造高密度，低成本可编程只读存储器（PROM）设备的潜力。本文比较了常规PROM器件的不同技术。本文研究了a-Si：H材料的制备工艺和表征。使用RF PECVD将a-Si：H膜沉积在电极驱动的基板上。胶片质量的主要特点是PL。膜的性能受功率，压力和温度等加工参数的强烈影响。从本文提出的PL信号可以看出胶片质量的差异。基材材料在决定薄膜生长方面也起着重要作用。如果薄膜在玻璃或uc-Si衬底上生长，则带隙不同的uc-Si，a-Si和a-Si：H混合相可以共存。本文给出了在不同条件下制造的器件。在大的正向偏置的电应力作用下，可获得105个正向电流增益。微电子和光子结构（AMPS）的设备计算机仿真工具分析被广泛用于帮助理解传输机制并指导我们的设计。使用通过载流子跳越缺陷状态的模型来解释故障机理。本文还证明了，我们可以使用AMPS程序将材料属性与设备性能联系起来。建模工作解释了在缺陷状态下由于电子俘获而引起的空间电荷限制电流，并模拟了击穿之前器件中厚度和缺陷密度效应的趋势。；我们还证明了器件小至1 x 1 um 2能够被制造。这项工作建立了基于这种技术制造潜在的大型阵列PROM的证据。 ECR PECVD用于沉积SiOx作为场氧化物。在论文中给出了工艺流程和器件特性。为了进一步降低制造PROM的成本，我们探索了在玻璃基板上制造器件的可能性。本文讨论了三种不同的制作多晶硅n层的方法，以及它们的电导率，UV和X射线衍射测量。最后，我们报告了在LPCVD多晶硅衬底上制造该器件的成功经验。

著录项

  • 作者

    Zhu, Hong.;

  • 作者单位

    The Pennsylvania State University.;

  • 授予单位 The Pennsylvania State University.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 144 p.
  • 总页数 144
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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