This thesis examines the use of high temperature superconductor (HTS) thin film transmission lines for application in high performance multi-chip modules (MCM). It experimentally compares the HTS signal integrity performance to aluminum transmission lines of the same geometry at cryogenic (77K) and room temperatures.; The CPW structure has a linewidth of 10mum and a 30mum pitch which corresponds to a 60O characteristic impedance for a normal metal conductor. The YBCO transmission line impedance was found to be elevated, by approximately 15% on average, over that of the normal metal due to the London penetration depth of the HTS.; Some of the thin (≤200nm) YBCO films deposited on LAO substrates at SUNY at Albany had excellent normal resistivity properties with 100K resistivities and temperature dependencies comparable to good single crystals. These films had critical temperatures, Tc = 88K, and critical current density, Jc > 2 x 106 A/cm2, at 77K. The YBCO films deposited at other sources had Tc's of 82 to 85K and Jc's of 2 x 105 to 2 x 106 A/cm 2.; The performance of the HTS films at digital switching currents and logic levels was evaluated. A High-Voltage-TDT test was developed that measured the transmission response of the HTS transmission line up to 5V using an HP8161A 1ns risetime pulse generator. The dependence of resistivity on the increased current density showed a gradual increase in the resistivity above 2 x 105 A/cm2, approaching values comparable to aluminum at 77K at about 8 x 105 A/cm2.; The time domain results show that excellent pulse performance can be achieved over long distances at cryogenic temperatures with YBCO films in a tightly pitched CM structure. The current densities measured via the HV-TDT method were found to be comparable to electromigration current densities of normal metal films at room temperature. They indicate that thin, narrow pitch, YBCO films could be used with the digital switching currents and voltage levels required for use in an MCM. Thus a compact high performance MCM could be achieved at cryogenic temperatures by using a layer of YBCO for the long interconnects and Al for the shorter wires. (Abstract shortened by UMI.)
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机译：本文研究了高温超导体（HTS）薄膜传输线在高性能多芯片模块（MCM）中的应用。它在低温（77K）和室温下，将HTS信号完整性性能与相同几何形状的铝传输线进行了比较。 CPW结构的线宽为10mum，间距为30mum，对应于普通金属导体的60O特性阻抗。由于HTS的伦敦穿透深度，发现YBCO传输线的阻抗平均比普通金属提高了约15％。在奥尔巴尼纽约州立大学洛杉矶分校的LAO衬底上沉积的某些薄（≤200nm）YBCO薄膜具有优良的法向电阻率特性，具有100K的电阻率，其温度依存性可与良好的单晶相比。这些薄膜在77K时具有临界温度Tc = 88K，临界电流密度Jc> 2 x 106 A / cm2。在其他源处沉积的YBCO薄膜的Tc为82至85K，Jc为2 x 105至2 x 106 A / cm 2。评估了HTS薄膜在数字开关电流和逻辑电平下的性能。开发了高压TDT测试，使用HP8161A 1ns上升时间脉冲发生器测量了高达5V的HTS传输线的传输响应。电阻率对增加的电流密度的依赖性表明，电阻率在2 x 105 A / cm2以上逐渐增加，接近于在约8 x 105 A / cm2的77K铝时的可比值。时域结果表明，采用紧密排列的CM结构的YBCO膜，可以在低温下长距离实现出色的脉冲性能。发现通过HV-TDT方法测量的电流密度与室温下普通金属膜的电迁移电流密度相当。它们表明，可以将薄而窄间距的YBCO膜与MCM中所需的数字开关电流和电压电平一起使用。因此，通过在较长的互连线上使用YBCO层，在较短的导线上使用Al，可以在低温下实现紧凑的高性能MCM。 （摘要由UMI缩短。）
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