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首页> 外文学位 >Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition .
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Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition .

机译：通过金属有机化学气相沉积法生长的氮化铟，氮化铟镓合金的光学，结构和传输性能。

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摘要

InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and InxGa 1-xN alloys.;In this context Ga-rich InxGa1-xN (x ≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed InxGa1-xN films with x= 0.37 had single phase. Phase separation occurred for x ∼ 0.4. To understand the issue of phase separation in Ga-rich InxGa 1-xN, studies on growth of pure InN and In-rich InxGa 1-xN alloys were carried out.;InN and In-rich InxGa1-xN (x ∼ 0.97-0.40) epilayers were grown on AlN/Al2O3 templates. A Hall mobility of 1400 cm2/Vs with a carrier concentration of 7x1018cm -3 was observed for InN epilayers grown on AlN templates. Photoluminescence (PL) emission spectra revealed a band to band emission peak at ∼0.75 eV for InN. This peak shifted to 1.15 eV when In content was varied from 1.0 to 0.63 in In-rich InxGa1-xN epilayers. After growth parameter optimization of In-rich InxGa1-xN alloys with (x = 0.97-0.40) were successfully grown without phase separation.;Effects of Mg doping on the PL properties of InN epilayers grown on GaN/Al 2O3 templates were investigated. An emission line at ∼ 0.76 eV, which was absent in undoped InN epilayers and was about 60 meV below the band edge emission peak at ∼ 0.82 eV, was observed to be the dominant emission in Mg-doped InN epilayers. PL peak position and the temperature dependent emission intensity corroborated each other and suggested that Mg acceptor level in InN is about 60 meV above the valance band maximum.;Strain effects on the emission properties of InGaN/GaN multiple quantum wells (MQWs) were studied using a single blue LED wafer possessing a continuous variation in compressive strain. EL emission peak position of LEDs varies linearly with the biaxial strain; a coefficient of 19 meV/GPa, characterizes the relationship between the band gap energy and biaxial stress of In 0.2Ga0.8N/GaN MQWs.
机译：在过去的十年中，已经成功生产了基于InGaN的蓝色和绿色发光二极管（LED）。但是这些LED的发展通常受到InGaN的基本问题的限制，例如InN和GaN之间的晶格常数，热膨胀系数和物理性质的差异。通过研究纯InN和InxGa 1-xN合金可以解决这一难题。在这种情况下，通过金属有机化学气相沉积（MOCVD）来生长富含Ga的InxGa1-xN（x≤0.4）外延层。 X射线衍射（XRD）测量表明，x = 0.37的InxGa1-xN膜具有单相。 x〜0.4时发生相分离。为了理解富Ga的InxGa 1-xN中的相分离问题，对纯InN和富In的InxGa 1-xN合金的生长进行了研究。; InN和富In的InxGa1-xN（x〜0.97-0.40外延层生长在AlN / Al2O3模板上。对于在AlN模板上生长的InN外延层，观察到霍尔迁移率为1400 cm2 / Vs，载流子浓度为7x1018cm -3。光致发光（PL）发射光谱揭示了InN在〜0.75 eV处的能带间发射峰。当富Inx的InxGa1-xN外延层中In的含量从1.0变为0.63时，该峰移动到1.15 eV。优化生长参数优化后，成功地生长了（x = 0.97-0.40）的In-In-GaN-xN合金而没有相分离。;研究了Mg掺杂对在GaN / Al 2O3模板上生长的InN外延层的PL性能的影响。观察到在未掺杂的InN外延层中不存在的约0.76 eV的发射线，它比在掺杂Mg的InN外延层中的主要发射要低，该发射线比在〜0.82 eV的能带边缘发射峰低约60 meV。 PL峰位置和温度相关的发射强度相互佐证，表明InN中的Mg受体能级比价带最大值高约60 meV 。；使用InGaN / GaN多量子阱（MQWs）研究了应变对发射特性的影响具有压缩应变连续变化的单个蓝色LED晶片。 LED的EL发射峰位置随双轴应变线性变化； 19 MeV / GPa的系数表征了In 0.2Ga0.8N / GaN MQWs的带隙能量与双轴应力之间的关系。

著录项

  • 作者

    Khan, Neelam.;

  • 作者单位

    Kansas State University.;

  • 授予单位 Kansas State University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 113 p.
  • 总页数 113
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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