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Red and infrared phosphide materials grown by solid source molecular beam epitaxy.

机译：通过固体源分子束外延生长的红色和红外磷化物材料。

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摘要

Materials and device research is presented on the growth and characterization of GaInAsP and AlGaInP to demonstrate the effectiveness, for III-V semiconductor materials development, of the valved cracker solid phosphorus source. Incorporation differences into GaInAsP between As2 and As4, and P 2 and P4 are studied. In preparation for 1.3 mum laser development, the growth parameters for high quality GaInAsP are determined. Low threshold 1.3 mum InAsP/GaInAsP lasers are demonstrated and characterized. Laser processing procedures applicable to the InP material system are also described. Material quality comparisons are made on samples grown by the two prevailing solid phosphide sources; the valved cracker phosphorus source and the GaP effusion cell. Room temperature photoluminescence measurements are used to determine the optimum growth conditions, when using each phosphide source, for a test GaInP/AlGaInP laser core structure. Secondary ion mass spectroscopy is used to compare oxygen contamination of the two phosphide sources and to investigate the influence of cracker temperature on oxygen contamination. The potential of the GaP source to produce white phosphorus deposits in the growth chamber is also explored.
机译：介绍了有关GaInAsP和AlGaInP的生长和特性的材料和器件研究，以证明带阀饼干固体磷源对III-V半导体材料开发的有效性。研究了As2和As4以及P 2和P4在GaInAsP中的掺入差异。在准备1.3毫米激光器的开发中，确定了高质量GaInAsP的生长参数。演示并表征了低阈值1.3毫米InAsP / GaInAsP激光器。还介绍了适用于InP材料系统的激光加工程序。对两种主要的固体磷源生长的样品进行材料质量比较。带阀门的裂解器磷源和GaP排放池。当使用每种磷化物源时，室温GainP / AlGaInP激光芯结构的室温光致发光测量可用于确定最佳生长条件。二次离子质谱法用于比较两种磷源的氧污染，并研究裂解炉温度对氧污染的影响。还探讨了GaP源在生长室中产生白磷沉积物的潜力。

著录项

  • 作者

    Wamsley, Charles C.;

  • 作者单位

    University of Rochester.;

  • 授予单位 University of Rochester.;
  • 学科 Engineering Electronics and Electrical.; Physics Optics.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 135 p.
  • 总页数 135
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;光学;工程材料学;
  • 关键词

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