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Accurate determination of nonlinear optical parameters of semiconductors at infrared wavelengths.

机译：准确确定半导体在红外波长下的非线性光学参数。

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摘要

Nonlinear optics covers the vast field of irradiance dependent interactions between light and materials, including generation of light in a second order medium through processes such as optical parametric oscillation or self attenuation of light in a third order medium. It is important to determine the relevant material parameters which control the efficiency of the interactions. In extracting material parameters from experimental results, many assumptions of questionable validity are often made to simplify calculations. In this work, a numerical model was developed, with as few assumptions on laser beam parameters as possible, to describe the interactions of arbitrary, complex four dimensional electro-magnetic fields with a nonlinear medium.;Second harmonic generation (SHG) is a second order nonlinear optical phenomenon in which an incident light beam at one frequency generates light at twice the frequency. In this work, SHG in a newly grown material, CdSiP 2 was investigated and the first efficient harmonic generation in this crystal was accomplished at a mid-wave infrared wavelength. Excellent agreement between experimental results and theory was obtained, with no free parameters, using a numerical model which accurately modeled spatial and temporal beam profiles.;An area of third order nonlinear optics is self action, where nonlinear absorption and refraction in a medium are dependent on the irradiance of the incident light. Nonlinear absorption in semiconductors is a coupled process where intrinsic two photon absorption generates free carriers which in turn modify the linear absorption via free carrier absorption. In addition, the generated free carriers alter the phase of the beam through nonlinear refraction. Thermal effects also play a role since the nonlinear absorption leads to heat rise within the material which in turn generates a thermal lens. All of these coupled processes occur simultaneously in the nonlinear medium. Investigation of these effects in the semiconductor InP was conducted and for the first time, a self consistent set of intrinsic two photon absorption coefficients and free carrier nonlinear absorption cross-sections were found at two different infrared wavelengths. Values of the free carrier absorption coefficients of InP determined by nonlinear absorption measurements have not been previously reported.
机译：非线性光学器件覆盖了光与材料之间依赖于辐照度的相互作用的广阔领域，包括通过诸如光参量振荡或光在三阶介质中的自衰减之类的过程在二阶介质中产生光。确定控制相互作用效率的相关材料参数很重要。在从实验结果中提取材料参数时，经常会做出许多可疑有效性的假设，以简化计算。在这项工作中，建立了一个数值模型，该模型尽可能少地假设了激光束参数，以描述任意，复杂的四维电磁场与非线性介质的相互作用。;二次谐波产生（SHG）是第二次阶非线性光学现象，其中某一频率的入射光束产生两倍频率的光。在这项工作中，研究了新生长材料CdSiP 2中的SHG，并在中波红外波长下完成了该晶体的首次有效谐波生成。使用精确建模时空光束轮廓的数值模型，在没有自由参数的情况下获得了实验结果与理论之间的极佳一致性。;三阶非线性光学的区域是自作用的，其中介质中的非线性吸收和折射是相关的入射光的辐照度半导体中的非线性吸收是一个耦合过程，其中固有的两个光子吸收会产生自由载流子，进而通过自由载流子吸收改变线性吸收。另外，产生的自由载流子通过非线性折射改变光束的相位。由于非线性吸收会导致材料内的热量上升，进而产生热透镜，因此热效应也起着作用。所有这些耦合过程在非线性介质中同时发生。对半导体InP中的这些效应进行了研究，并且首次在两个不同的红外波长下发现了一组自洽的固有的两个光子吸收系数和自由载流子非线性吸收截面。以前尚未报道过通过非线性吸收测量确定的InP的自由载流子吸收系数的值。

著录项

  • 作者

    Gonzalez, Leonel Pastor.;

  • 作者单位

    University of Dayton.;

  • 授予单位 University of Dayton.;
  • 学科 Engineering Electronics and Electrical.;Physics Optics.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 82 p.
  • 总页数 82
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;光学;
  • 关键词

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