• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, Jul 9-11, 2002, Seattle, Washington, USA >Far-infrared Magneto-Optical Generalized Ellipsometry determination of free-carrier parameters in semiconductor thin film structures
【24h】

Far-infrared Magneto-Optical Generalized Ellipsometry determination of free-carrier parameters in semiconductor thin film structures

机译：半导体薄膜结构中自由载流子参数的远红外磁光广义椭圆偏振法测定

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In accord with the Drude model, the free-carrier contribution to the dielectric function at infrared wavelengths is proportional to the ratio of the free-carrier concentration N and the effective mass m, and the product of the optical mobility μ and m. Typical infrared optical experiments are therefore sensitive to the free-carrier mass, but determination of m from the measured dielectric function requkes an independent experiment, such as an electrical Hall-effect measurement, which provides either N or μ. However, doped zincblende Ⅲ-Ⅴ-semiconductors exposed to a strong external magnetic field exhibit non-symmetric magneto-optical (MO) birefringence, which is inversely proportional to m. Therefore, if the spectral dependence of the MO dielectric function tensor is known, the parameters N, μ and m can be determined independently from optical measurements alone. Generalized Ellipsometry (GE) measures three complex-valued ratios of normalized Jones matrix elements, from which the individual tensor elements of the dielectric function of arbitrarily anisotropic materials in layered samples can be reconstructed. We present the application of GE at far-infrared (FIR) wavelengths for measurement of the FIR-MO-GE parameters, and determine the MO dielectric function of GaAs for wavelengths from 100 μm to 15 μm. We obtain the free electron mass and mobility results in excellent agreement with results obtained from Hall-effect and Shubnikov-de-Haas experiments. (F)IR-MO-GE may open up new avenues for non-destructive characterization of free-carrier properties in complex semiconductor heterostructures.
机译：根据Drude模型，在红外波长下，自由载流子对介电函数的贡献与自由载流子浓度N与有效质量m的比值以及光学迁移率μ和m的乘积成正比。因此，典型的红外光学实验对自由载流子质量敏感，但是从测得的介电函数确定m则需要进行独立的实验，例如提供N或μ的电霍尔效应测量。然而，暴露于强外部磁场中的掺杂的Zn-BlendeⅢ-Ⅴ型半导体表现出与m成反比的非对称磁光（MO）双折射。因此，如果已知MO介电函数张量的光谱依赖性，则可以独立于单独的光学测量独立地确定参数N，μ和m。广义椭偏法（GE）测量归一化的Jones矩阵元素的三个复数值比，从中可以重构分层样本中任意各向异性材料的介电函数的各个张量元素。我们介绍了GE在远红外（FIR）波长上的应用，用于测量FIR-MO-GE参数，并确定了从100μm至15μm波长的GaAs的MO介电函数。我们获得的自由电子质量和迁移率结果与霍尔效应和Shubnikov-de-Haas实验获得的结果非常吻合。 （F）IR-MO-GE可以为复杂半导体异质结构中的自由载流子特性的非破坏性表征开辟新的途径。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号