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Electronic properties of SiC and AlN surfaces and interfaces.

机译：SiC和AlN表面和界面的电子特性。

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摘要

Surface properties are important in semiconductor processing as the surface preparation can affect electronic properties. For this reason, the surfaces of SiC and AlN have been studied to determine how the electronic properties vary with surface treatment. The surface electronic structure of clean 6H silicon carbide (SiC) has been investigated by Angle Resolved Ultraviolet Photoelectron Spectroscopy (ARUPS). The surfaces were prepared by in situ silane exposure, and clean well ordered surfaces were obtained. The surface structures were characterized with LEED, Auger electron spectroscopy, and XPS. The results demonstrated the removal of oxygen and other contamination. By variation of the silane exposure and temperature, surfaces were examined that exhibited {dollar}3times 3,{dollar} {dollar}1times 1{dollar} and {dollar}sqrt{lcub}3{rcub}times sqrt{lcub}3{rcub}{dollar} surface diffraction. Features were observed in the ARUPS spectra that were attributed to the presence of surface states/surface resonances. The surface dispersion of the states are reported. Hydrogen exposure resulted in the removal of the surface state.; The characteristics of epitaxial AlN grown on SiC has also been studied. We determine that the surface exhibits a negative electron affinity (NEA). Samples studied were grown by ECR plasma, or gas source molecular beam epitaxy (GSMBE).; This study also presents results of UV-photoemission measurements of the surface and interface properties of heteroepitaxial AlGaN on 6H-SiC. We expect that as AlN/SiC exhibits an NEA surface, that there is a transition point in the AlGaN solid solution. In this study AlGaN alloy films were grown by organometallic vapor phase epitaxy (OMVPE), or by in situ GSMBE. All analysis took place in an integrated UHV system which included the analysis techniques, and a surface processing chamber. The OMVPE alloy samples were transported in air to the surface characterization system. The surface electronic states were characterized by UV photoemission to determine whether the electron affinity was positive or negative. The AlN samples exhibited the characteristics of a NEA while the GaN and low Al AlGaN samples did not. It was determined that the affinity transition point was 65% Al content.
机译：表面性质在半导体加工中很重要，因为表面处理会影响电子性质。因此，已经对SiC和AlN的表面进行了研究，以确定电子性能如何随表面处理而变化。清洁6H碳化硅（SiC）的表面电子结构已通过角度分辨紫外光电子能谱（ARUPS）进行了研究。通过原位硅烷暴露来制备表面，并获得干净有序的表面。用LEED，俄歇电子能谱和XPS表征了表面结构。结果表明去除了氧气和其他污染物。通过硅烷暴露量和温度的变化，对表面进行了检查，结果显示出{美元} 3乘以3，{美元} {美元}乘以1乘以{美元}和{美元} sqrt {lcub}乘以3 {rcub}乘以sqrt {lcub}乘以3 { rcub} {dollar}表面衍射。在ARUPS光谱中观察到的特征归因于表面状态/表面共振的存在。报告了状态的表面分散。氢暴露导致表面状态的去除。还研究了在SiC上生长的外延AlN的特性。我们确定表面表现出负电子亲和力（NEA）。所研究的样品通过ECR等离子体或气源分子束外延（GSMBE）生长。这项研究还提出了6H-SiC上外延AlGaN的表面和界面特性的紫外光发射测量结果。我们预计，由于AlN / SiC呈现NEA表面，因此AlGaN固溶体中存在过渡点。在这项研究中，通过有机金属气相外延（OMVPE）或通过原位GSMBE来生长AlGaN合金膜。所有分析都在一个集成的特高压系统中进行，该系统包括分析技术和一个表面处理室。将OMVPE合金样品在空气中运输到表面表征系统。通过UV光发射表征表面电子态，以确定电子亲和力是正还是负。 AlN样品表现出NEA的特性，而GaN和低Al AlGaN样品则没有。确定了亲和力转变点为65％的Al含量。

著录项

  • 作者

    Benjamin, Mark Conrad.;

  • 作者单位

    North Carolina State University.;

  • 授予单位 North Carolina State University.;
  • 学科 Physics Condensed Matter.; Engineering Materials Science.; Physics Electricity and Magnetism.
  • 学位 Ph.D.
  • 年度 1998
  • 页码 101 p.
  • 总页数 101
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;电磁学、电动力学;
  • 关键词

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