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A study of thermal exchange in a thermophotovoltaic (TPV) system at moderate temperature.

机译：对温度适中的热光电（TPV）系统中的热交换的研究。

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A numerical simulation study is reported on the thermal exchange in an evacuated parallel-plate system consisting of an emitter and a photovoltaic (PV) material with the emitter temperature between 350K and 550K. Although higher temperature (and thus higher power output) thermophotovoltaic systems have been of interest previously, the focus here is on systems that can not achieve high temperatures, like micromachines. The study examines the electrical power output and power generation efficiency for four kinds of emissivity variations for the heat source coupled with three different compounds of {dollar}rm Insb{lcub}(x){rcub}Gasb{lcub}(1-x){rcub}As{dollar} PV materials. The results show that a 25% Ho YAG thin film selective emitter coupled with an In(0.72)Ga(0.28)As material has the highest power generation efficiency for actual materials. These values are between 28% and 34%, depending upon the temperature. Also, the ideal cases that yield the potential maximum electrical power output and power generation efficiency for this temperature range are discussed.
机译：数值模拟研究报道了在真空平行板系统中的热交换，该系统由发射器和发射器温度在350K至550K之间的光伏（PV）材料组成。尽管先前已经对温度更高（因此功率输出更高）的热电光伏系统感兴趣，但这里的重点是无法实现高温的系统，例如微型机器。这项研究研究了热源与三种不同化合物{USD} rm Insb {lcub}（x）{rcub} Gasb {lcub}（1-x）的四种发射率变化的电功率输出和发电效率。 {rcub}作为{dollar} PV材料。结果表明，将25％的Ho YAG薄膜选择性发射极与In（0.72）Ga（0.28）As材料耦合，对于实际材料具有最高的发电效率。这些值在28％到34％之间，具体取决于温度。此外，还讨论了在此温度范围内产生潜在最大电功率输出和发电效率的理想情况。

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