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Synthesis and characterization of LPCVD SiC films using novel precursors.

机译：LPCVD SiC薄膜的合成和表征。

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摘要

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon.; Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850{dollar}spcirc{dollar}C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of 625 to 750{dollar}spcirc{dollar}C, the composition of the deposits changed progressively from slightly silicon rich (55% Si) to slightly carbon rich (51%C). Above 750{dollar}spcirc{dollar}C, there was a rapid increase in the carbon content from the near stoichiometric value to about 75%-C at 850{dollar}spcirc{dollar}C. The stoichiometric films exhibited high stress values of 700 {dollar}pm{dollar} 50 MPa. Attempts to reduce the stress values resulted in films with excess carbon content of about 60%-C. From the high frequency C-V characterization, the dielectric constant for these films was estimated to be 10.1 {dollar}pm{dollar} 0.5. Temperature bias stressing studies revealed a trapped charge density of {dollar}0.869times 10sp7{dollar} cI{dollar}sp{lcub}-2{rcub}{dollar} within the bulk.; Crystalline silicon carbide films were grown on silicon substrates using dichlorosilane and acetylene as precursors, in the temperature range of 950{dollar}spcirc{dollar}C to 1050{dollar}spcirc{dollar}C. The carbon content in the film was found to be increasing with the deposition temperature, when the flow ratio of precursors was one. The carbon composition was also found to be sharply dependent on acetylene flow, for constant deposition temperature and pressure. Stoichiometric films were achieved for dichlorosilane to acetylene flow ratio of 4:1. X-ray diffraction studies confirmed the growth of {dollar}beta{dollar}-SiC with {dollar}{dollar} orientation in all the cases. The voltage-current relationship for Si-film-metal structure showed a diode behavior with an ideality factor of 4.03 in the diffusion current dominating regime.
机译：已经开发出独特的低压化学气相沉积（LPCVD）工艺，以使用环境友好的化学物质合成非晶和结晶SiC膜。建立了控制工艺变量，组成和所选膜的选择性能的相互关系。此类膜可用于生产用于X射线光刻的高质量掩模膜。这些薄膜还可用于制造高功率电子器件，以及与硅结合的异质结器件。使用单一前体二叔丁基硅烷，在低于850℃的温度下合成了非晶SiC膜。对这些沉积物进行的成分分析表明，在625至750℃的沉积温度范围内，沉积物的组成从轻度富硅（55％Si）逐渐变为轻度富碳（51％Si）。 C）。高于750℃时，碳含量从接近化学计量值迅速增加到850℃时的碳含量从约化学计量值增加到约75％C。化学计量的膜表现出700 MPa（美元）50 MPa的高应力值。降低应力值的尝试导致了碳含量约60％-C的薄膜。根据高频C-V表征，这些膜的介电常数估计为10.1 {pm} {{}} 0.5。温度偏置应力研究表明，在整个主体中，陷阱电荷密度为{dollar} 0.869乘以10sp7 {dollar} cI {dollar} sp {lcub} -2 {rcub} {dollar}。使用二氯硅烷和乙炔作为前体，在950spC到1050 {C的温度范围内，在硅衬底上生长了结晶碳化硅膜。当前体的流量比为1时，发现膜中的碳含量随着沉积温度而增加。对于恒定的沉积温度和压力，还发现碳成分严重依赖于乙炔流量。对于二氯硅烷与乙炔的流量比为4：1，获得了化学计量膜。 X射线衍射研究证实了在所有情况下都以{美元} {美元}取向生长{美元}β{美元} -SiC。在扩散电流支配状态下，Si-膜-金属结构的电压-电流关系显示二极管行为，理想因子为4.03。

著录项

  • 作者

    Bhaskaran, Mahalingam.;

  • 作者单位

    New Jersey Institute of Technology.;

  • 授予单位 New Jersey Institute of Technology.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 95 p.
  • 总页数 95
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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