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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD
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Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD

机译：LPCVD法控制C面蓝宝石衬底上3C-SiC和6H-SiC膜的生长和表征

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摘要

SiC films have been deposited on C-plane (0001) sapphire substrates by low pressure chemical vapor deposition (LPCVD). The 3C-SiC and 6H-SiC polytype kinds of the films grown at two different growth parameters (growth temperature and flow rate of silane) were verified by Raman spectra analysis. The results of XRD patterns and rocking curves show the films are of good crystalline quality. The microstructure of the films was measured by high resolution transmission electron microscopy (HRTEM). Field emission scanning electron microscope (FESEM) and atomic force microscope (AFM) were used to evaluate the surface morphology. The chemical bond and composition of the films were characterized by X-ray photoelectron spectra (XPS). All of these results further confirm that the SiC films are of good quality.
机译：SiC薄膜已通过低压化学气相沉积（LPCVD）沉积在C面（0001）蓝宝石衬底上。通过拉曼光谱分析验证了在两个不同的生长参数（生长温度和硅烷的流速）下生长的薄膜的3C-SiC和6H-SiC多型类型。 XRD图谱和摇摆曲线的结果表明该膜具有良好的结晶质量。通过高分辨率透射电子显微镜（HRTEM）测量膜的微观结构。场发射扫描电子显微镜（FESEM）和原子力显微镜（AFM）用于评估表面形态。膜的化学键和组成由X射线光电子能谱（XPS）表征。所有这些结果进一步证实了SiC膜是高质量的。

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