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首页> 外文学位 >Microstructure and properties of zirconium-rich lead(zirconium(x)titanium(1-x))oxygen(3) thin films prepared by metallo-organic deposition (MOD) technique.
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Microstructure and properties of zirconium-rich lead(zirconium(x)titanium(1-x))oxygen(3) thin films prepared by metallo-organic deposition (MOD) technique.

机译：金属有机沉积（MOD）技术制备的富锆的铅（x（x）钛（1-x））氧（3）薄膜的微观结构和性能。

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摘要

Dense, uniform Zr-rich Pb(Zr;In this investigation, it was shown that the pyrochlore phase is an unavoidable intermediate phase during the phase evolution of the Zr-rich PZT films. The growth of the perovskite phase fom the pyrochlore phase is interface controlled. Evaporation of PbO or Pb during the post-annealing process is the reason for the existence of the pyrochlore phase in the PZT films. A PbO surface coating has proven to be an effective method for obtaining the pure perovskite phase in the Zr-rich PZT thin films.;Also, this study has revealed that highly oriented PZT films are preferably developed on Pt/Si substrates with a perfect (111)-oriented Pt layer. Based on composition studies, it is proposed that the direct epitaxial effect of the sub-(111) Pt-layer results in (111)-oriented PZT films, whereas the intermediate PbO phase induces (100)-oriented PZT films.;(111)-oriented PZT 90/10 films, with P;The antiferroelectric PZT 97/3 films showed field-forced AFE-FE phase transition characteristics with reversible polarization, and a strain of 0.3% was measured for the transition. A relationship between the switching field of the AFE-FE transition, temperature, and applied electric field strength was established. The experiment data verified that the switching field for inducing the AFE-to-FE phase transition was independent of the applied field strength, and that the switching field strength decreased linearly with increase in temperature.
机译：致密均匀的富Zr的Pb（Zr;）研究表明，在富Zr的PZT薄膜的相演化过程中，烧绿石相是不可避免的中间相。烧绿石相中钙钛矿相的生长是界面在后退火过程中，PbO或Pb的蒸发是PZT膜中存在烧绿石相的原因，PbO表面涂层已被证明是在Zr富集中获得纯钙钛矿相的有效方法。此外，这项研究还表明，高度取向的PZT薄膜最好在具有完美（111）取向的Pt层的Pt / Si衬底上进行显影，基于成分研究，提出了PZT薄膜的直接外延效应亚（111）Pt层产生（111）取向的PZT膜，而中间的PbO相则产生（100）取向的PZT膜。;（111）取向的PZT 90/10膜，含P;反铁电PZT 97/3胶片显示场强AFE-FE相变极化特性可逆，并且转变的应变为0.3％。建立了AFE-FE转变的转换场，温度和施加的电场强度之间的关系。实验数据证明，引起AFE到FE相变的转换场与所施加的场强无关，并且转换场强随温度的升高呈线性下降。

著录项

  • 作者

    Huang, Jie.;

  • 作者单位

    University of Cincinnati.;

  • 授予单位 University of Cincinnati.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 177 p.
  • 总页数 177
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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