• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Design and characterization of integrated photonic devices fabricated using selective-area epitaxy and distributed Bragg reflector surface gratings.
【24h】

Design and characterization of integrated photonic devices fabricated using selective-area epitaxy and distributed Bragg reflector surface gratings.

机译：使用选择性区域外延和分布式布拉格反射器表面光栅制造的集成光子器件的设计和表征。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Two of the main challenges involved with the fabrication of integrated photonic devices are the control of the in-plane band gap and the formation of integrable high-Q cavities. In-plane bandgap control is required to fabricate emitters, passive waveguides, detectors, and modulators all on a single wafer and all optimized for operation at a particular wavelength. The formation of integrable high-Q cavities is needed to integrate the laser source.; Selective-area epitaxy (SAE) is a powerful technique which enables the tailoring of the in-plane band gap energy to fabricate numerous optimized photonic devices on a single wafer. In this dissertation, a three-step SAE process in the InGaAs-GaAs-AlGaAs material system is investigated. This process produced discrete Fabry-Perot lasers with threshold currents as low as 2.65 mA for an uncoated device and 0.97 mA for a coated device. Several integrated photonic devices that utilize the in-plane bandgap control of this SAE process are also investigated. These devices include lasers with nonabsorbing mirrors, dual-channel wavelength division multiplexing sources with integrated coupler, lasers with integrated photodiodes, lasers with integrated intracavity modulators, and lasers with integrated external cavity modulators.; The second challenge involved with the fabricating of integrated photonic devices is the formation of integrable high-Q cavities. The optical feedback in most laser diodes is provided by cleaved facets. Unfortunately, cleaved facets are not an option when designing integrated photonic devices. However, optical feedback can be provided in integrated photonic devices using distributed Bragg reflectors (DBRs). In this dissertation, ridge-waveguide DBR lasers with first-order surface gratings are investigated. These lasers exhibit low thresholds (6 mA), high slope efficiencies (0.46 W/A), and single-frequency operation with narrow linewidths ({dollar}<{dollar}25 kHz). By varying the period of the first-order DBR grating, a wide wavelength range of 540 A (15.2 THz) is obtained with threshold currents and slope efficiencies remaining below 10 mA and above 0.40 W/A, respectively, over the entire wavelength range. These gratings are also used to fabricate DBR lasers with monolithically integrated external cavity electroabsorption (EA) modulators without modification of the active region.
机译：集成光子器件制造涉及的两个主要挑战是平面内带隙的控制和可集成高Q腔的形成。需要平面内带隙控制才能将发射器，无源波导，检测器和调制器全部制造在单个晶片上，并且都针对特定波长下的操作进行了优化。集成激光源需要形成可集成的高Q腔。选择性区域外延（SAE）是一项强大的技术，可定制面内带隙能量，以在单个晶圆上制造众多优化的光子器件。本文研究了InGaAs-GaAs-AlGaAs材料系统中的三步SAE工艺。此过程生产的离散Fabry-Perot激光器的阈值电流对于未镀膜的器件低至2.65 mA，对于镀膜的器件低至0.97 mA。还研究了几种利用该SAE工艺的面内带隙控制的集成光子器件。这些设备包括带有非吸收镜的激光器，带有集成耦合器的双通道波分复用源，带有集成光电二极管的激光器，带有集成腔内调制器的激光器以及带有集成外腔调制器的激光器。制造集成光子器件所涉及的第二个挑战是形成可集成的高Q腔。大多数激光二极管中的光学反馈是由劈开的小面提供的。不幸的是，在设计集成光子器件时，不能选择开裂的小平面。但是，可以使用分布式布拉格反射器（DBR）在集成光子设备中提供光反馈。本文研究了具有一阶表面光栅的脊波导DBR激光器。这些激光器显示出低阈值（6 mA），高斜率效率（0.46 W / A）和单频工作且线宽较窄（{dollar} <{dollar} 25 kHz）。通过改变一阶DBR光栅的周期，可获得540 A（15.2 THz）的宽波长范围，在整个波长范围内，阈值电流和斜率效率分别保持低于10 mA和高于0.40 W / A。这些光栅还用于制造具有单片集成外腔电吸收（EA）调制器的DBR激光器，而无需修改有源区。

著录项

  • 作者

    Lammert, Robert Morand.;

  • 作者单位

    University of Illinois at Urbana-Champaign.;

  • 授予单位 University of Illinois at Urbana-Champaign.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 105 p.
  • 总页数 105
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:49:07

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号