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Interfacial structure, process control and adhesion strength of copper to aluminum oxide and aluminum nitride direct bonds.

机译:铜与氧化铝和氮化铝直接键合的界面结构,工艺控制和粘合强度。

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摘要

Gas-metal eutectic bonded Cu to The Cu-The Cu-O eutectic melt dissolved the minor constituents (MgO, CaO & SiOA processing study indicated that eutectic bonding by introducing oxygen in the gas environment was undesirable. This condition caused bulk Cu melting. It was preferable to preoxidize the Cu surface and then bond in an inert atmosphere. This gave a larger time/temperature operation window and more uniform bonds.For direct bonded Cu to AlN, preoxidation of the AlN surface was required for wetting by the Cu-O eutectic melt. Both bond strength and fracture mode was found to depend on the degree of preoxidation, the bonding environment and the AlN sample source.An optimum temperature existed for the AlN preoxidation, about 1300The The variation in bond strength among different AlN samples was attributed to differences in oxidation behavior. High adhesion strength was associated with a thicker
机译:铜与铜的气体-金属共晶键合-铜-氧共晶熔体溶解了微量成分(MgO,CaO和SiOA加工研究表明,在气体环境中引入氧气进行共晶键合是不可取的。这种条件导致大量的铜熔融。最好先对铜表面进行预氧化,然后在惰性气氛中进行键合,这样可以提供更大的时间/温度操作窗口和更均匀的键合。对于将铜直接键合到AlN上,需要先对AlN表面进行预氧化才能通过Cu-O进行润湿共晶熔体的结合强度和断裂模式都取决于预氧化程度,结合环境和AlN样品来源.AlN预氧化存在一个最佳温度,约为1300°C。氧化行为差异的原因高附着强度与更厚

著录项

  • 作者

    Chiang, Wan-Lan.;

  • 作者单位

    Rutgers The State University of New Jersey - New Brunswick.;

  • 授予单位 Rutgers The State University of New Jersey - New Brunswick.;
  • 学科 Engineering Metallurgy.Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1993
  • 页码 274 p.
  • 总页数 274
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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