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High-speed microprocessor design with gallium arsenide very large scale integrated digital circuits.

机译:采用砷化镓超大规模集成数字电路的高速微处理器设计。

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This thesis explores the feasibility of designing a computer using gallium arsenide very large scale integrated circuits (GaAs VLSI). The following aspects are considered: technology selection, on-chip interconnects, GaAs VLSI design techniques, microprocessor design, and high-speed testing.; General high-speed technology issues are discussed, and then GaAs and silicon technologies are compared. The Vitesse direct-coupled FET logic (DCFL) technology is outlined and found capable of supporting microprocessor design.; Alternatives for on-chip interconnects are compared: superconducting, optical, air-bridge, and conventional microstrip. SPICE simulations show reduced delay times for superconductors and air-bridges compared to normal interconnect, but superconductors have only slightly reduced interconnect delays compared to metal air-bridge interconnects with identical dimensions. Optical connections do not provide an advantage when used for on-chip interconnects because of driver and receiver delay and power consumption.; Circuit and architecture design issues in GaAs VLSI are addressed next. To maximize overall speed, the designer must be able to simultaneously optimize the system architecture, chip architecture, chip layout, circuit topology, logic gates, and devices, since all aspects are interdependent. Design for improved yield and low parasitic capacitance is important for GaAs VLSI. DCFL gate and buffer design, and their layout, are examined. Two new logic styles for DCFL are introduced: the OR gate and clocked logic, which give improved yield and speed.; To test and demonstrate DCFL design techniques, a microprocessor was designed to implement the MIPS instruction set and is designed to perform at 170 MIPS average with a 250 MHz clock. Microprocessor architecture and logic design with DCFL is examined. The design process brought out layout and design issues unique to high-speed DCFL VLSI. The VLSI design experience suggests some CAD tools for minimizing circuit delay and improving the designer's productivity.; Two GaAs VLSI chips, taken from the processor design, were implemented with DCFL: a three port, 1K bit register-file and an arithmetic and logic unit (ALU). Register-file and ALU testing open high-speed testing issues, so a DCFL fault model is presented, and design for testability is discussed. As part of this, a modified scan architecture for high-speed testing is proposed.
机译:本文探讨了使用砷化镓超大规模集成电路(GaAs VLSI)设计计算机的可行性。考虑以下方面:技术选择,片上互连,GaAs VLSI设计技术,微处理器设计和高速测试。讨论了一般的高速技术问题,然后比较了砷化镓和硅技术。概述了Vitesse直接耦合FET逻辑(DCFL)技术,发现该技术能够支持微处理器设计。比较了片上互连的替代方案:超导,光学,气桥和常规微带。 SPICE仿真显示,与常规互连相比,超导体和气桥的延迟时间缩短了,但与具有相同尺寸的金属气桥互连相比,超导体的互连延迟仅略有减少。由于用于驱动器和接收器的延迟和功耗,光连接用于片上互连时没有优势。接下来将解决GaAs VLSI中的电路和架构设计问题。为了使整体速度最大化,设计人员必须能够同时优化系统架构,芯片架构,芯片布局,电路拓扑,逻辑门和器件,因为所有方面都是相互依赖的。对于GaAs VLSI而言,提高产量和降低寄生电容的设计至关重要。检查了DCFL门和缓冲器的设计及其布局。引入了两种新的DCFL逻辑样式:“或”门和时钟逻辑,可提高良率和速度。为了测试和演示DCFL设计技术,设计了一个微处理器来实现MIPS指令集,并设计为在250 MHz时钟下平均执行170 MIPS。研究了DCFL的微处理器体系结构和逻辑设计。设计过程提出了高速DCFL VLSI特有的布局和设计问题。 VLSI设计经验建议使用一些CAD工具来最小化电路延迟并提高设计人员的生产率。使用DCFL实现了两个来自处理器设计的GaAs VLSI芯片:一个三端口,1K位寄存器文件和一个算术和逻辑单元(ALU)。寄存器文件和ALU测试带来了高速测试问题,因此提出了DCFL故障模型,并讨论了可测试性设计。作为其一部分,提出了一种用于高速测试的改进的扫描架构。

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