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Quantum well devices for microwave and millimeter wave oscillator applications.

机译：用于微波和毫米波振荡器应用的量子阱设备。

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摘要

The analysis, design, fabrication, and testing of a QWITT (quantum well injection transit time) diode oscillator and self-oscillating mixer are presented.; Small signal and large signal models for the QWITT device that relate physical device parameters to the dc terminal characteristics and predicted rf performance were developed. These models were then used to provide optimum device dimensions to maximize rf performance at a desired frequency of operation. The large signal device model was also used to design a planar QWITT diode oscillator.; Initially, GaAs/AlAs resonant tunneling diode structures were grown by MBE and devices with good room temperature negative differential resistance (NDR) characteristics were fabricated. A number of QWITT devices were then fabricated and planar and waveguide oscillator circuits were designed to test these devices at frequencies between 1-35 GHz. The rf performance of QWITT devices was shown to be significantly better than resonant tunneling diodes. An output power of 1 mW, corresponding to an output power density of 3.5-5 kW/cm{dollar}sp2{dollar} in the frequency range of 5-8 GHz has been obtained from a planar QWITT oscillator. This is the highest output power obtained from any quantum well oscillator at any frequency and is approximately 5 times higher power and 2-3 higher output power density than reported in the literature for a comparable frequency. This result also represents the first planar circuit implementation of a quantum well oscillator. By comparison, the cw output power density obtained from an IMPATT diode at these frequencies is 10-30 kW/cm{dollar}sp2{dollar}. Good qualitative agreement between the dc and rf characteristics of QWITT devices and theoretical predictions based on small signal and large signal analyses has been achieved. We also present results on improving dc-to-rf conversion efficiency by optimizing the design of the drift region in the device through the use of a doping spike. By optimizing the doping concentration of the spike, an increase in efficiency from 3% to 5% has been obtained, without compromising the output power at X-band.; We have demonstrated that self-oscillating QWITT diode mixers have the ability to produce conversion gain in both waveguide and planar circuits. A maximum conversion gain of 10 dB was obtained over a narrow band width of 10-20 MHz at X-band frequencies. If broad band operation (around 100-200 MHz) is desired, then this may be achieved with an average conversion loss of about 3-5 dB. To the best of our knowledge, this is the first report of conversion gain obtained from a self-oscillating mixer using any quantum well device and is also the highest conversion gain reported for a self-oscillating mixer circuit using any semiconductor device.
机译：介绍了QWITT（量子阱注入传输时间）二极管振荡器和自激振荡混频器的分析，设计，制造和测试。开发了用于QWITT设备的小信号和大信号模型，这些模型将物理设备参数与dc端子特性和预测的射频性能相关联。这些模型随后用于提供最佳的器件尺寸，以在期望的操作频率下最大化射频性能。大信号器件模型也用于设计平面QWITT二极管振荡器。最初，通过MBE生长GaAs / AlAs共振隧穿二极管结构，并制造了具有良好的室温负微分电阻（NDR）特性的器件。然后制造了许多QWITT器件，并设计了平面和波导振荡器电路以在1-35 GHz之间的频率下测试这些器件。事实证明，QWITT器件的射频性能明显优于谐振隧穿二极管。从平面QWITT振荡器已经获得了1mW的输出功率，其对应于在5-8GHz的频率范围内的3.5-5kW / cm 2的输出功率密度。这是在任何频率下从任何量子阱振荡器获得的最高输出功率，并且是可比频率下功率的约5倍，而输出功率密度则比文献中报道的高2-3倍。该结果也代表了量子阱振荡器的第一个平面电路实现。相比之下，在这些频率下从IMPATT二极管获得的cw输出功率密度为10-30 kW / cm {dollar} sp2 {dollar}。 QWITT器件的直流和射频特性与基于小信号和大信号分析的理论预测之间取得了良好的定性一致性。我们还介绍了通过使用掺杂尖峰优化器件中漂移区的设计来提高DC-RF转换效率的结果。通过优化尖峰的掺杂浓度，在不影响X波段输出功率的情况下，效率从3％提高到5％。我们已经证明，自激QWITT二极管混频器具有在波导和平面电路中产生转换增益的能力。在X波段频率上，在10-20 MHz的窄带宽上获得了10 dB的最大转换增益。如果需要宽带操作（大约100-200 MHz），则可以实现平均3-5 dB的转换损耗。据我们所知，这是使用任何量子阱器件从自激振荡混频器获得的转换增益的第一份报告，也是使用任何半导体器件的自激振荡混频器电路所报告的最高转换增益。

著录项

  • 作者

    Kesan, Vijay P.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Engineering Electronics and Electrical.; Physics Electricity and Magnetism.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1989
  • 页码 128 p.
  • 总页数 128
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;电磁学、电动力学;
  • 关键词

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