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首页> 外文学位 >Electrical Spin Injection and Detection in Ge Nanowires and Topological Insulators.
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Electrical Spin Injection and Detection in Ge Nanowires and Topological Insulators.

机译：Ge纳米线和拓扑绝缘体中的电自旋注入和检测。

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摘要

The continuous scaling of Si transistor feature size has driven the advancement of semiconductor technology in the past decades; however, such aggressive scaling is approaching the ultimate physical limit soon. Novel materials and devices are in urgent need to resolve a number of critical challenges. In particular, spintronic devices have been proposed and extensively studied by using the spin of electrons as another degree of freedom in devices for information processing, which enables advanced electronic devices that could potentially outperform Si devices with lower power dissipation and faster switching.;In this work, the carrier and spin transport in Ge nanowires will be presented. Atomic-scale thermal annealing was established as a convenient approach to make high-quality nanoscale source/drain contacts in high-performance Ge nanowire transistors. Electrical spin injection and detection in both p- and n-type Ge nanowires were demonstrated using ferromagnetic Mn5Ge3 Schottky contacts and Fe/MgO tunnel junctions, respectively. The measured spin lifetime and spin diffusion length in Ge nanowires were much larger than those reported for bulk Ge, suggesting that the spin relaxation was significantly suppressed in nanowires.;Furthermore, we studied the spin transport in topological insulators, in which the spin-momentum locking of helical surface states was preserved by the strong spin-orbit interaction and time-reversal symmetry. We demonstrated the electrical detection of the spin-polarized surface states conduction in topological insulator (Bi0.53Sb0.47)2Te 3 using a Co/Al2O3 ferromagnetic tunnel contact. Voltage (resistance) hysteresis was observed when sweeping the magnetic field, and the two resistance states were reversible by changing the electric current direction. Our results showed a direct evidence of the charge current-induced spin polarization in the topological surface states. With the understanding of spin injection and detection, it might open up great opportunities to explore novel spintronic devices based on topological insulators and Ge nanowires.
机译：在过去的几十年中，硅晶体管特征尺寸的不断缩小推动了半导体技术的发展。但是，这种积极的扩展很快就会达到极限物理极限。迫切需要新颖的材料和设备来解决许多关键挑战。特别是，自旋电子器件已经被提出并通过使用电子的自旋作为信息处理设备中的另一个自由度来进行了广泛的研究，这使得先进的电子设备在功耗和开关速度更快的情况下有可能超越硅器件。本文将介绍Ge纳米线的载流子和自旋输运。建立原子级热退火是一种方便的方法，可以在高性能Ge纳米线晶体管中制作高质量的纳米级源/漏触点。分别使用铁磁Mn5Ge3肖特基接触和Fe / MgO隧道结来证明p型和n型Ge纳米线中的自旋注入和检测。测得的Ge纳米线的自旋寿命和自旋扩散长度远大于块状Ge的自旋寿命和自旋扩散长度，这表明纳米线中的自旋弛豫被显着抑制。;此外，我们研究了拓扑绝缘体中的自旋输运强烈的自旋轨道相互作用和时间反转对称性保留了螺旋表面状态的锁定。我们展示了使用Co / Al2O3铁磁隧道接触对拓扑绝缘子（Bi0.53Sb0.47）2Te 3中的自旋极化表面态传导的电检测。扫描磁场时观察到电压（电阻）滞后，并且通过改变电流方向可以使两个电阻状态可逆。我们的结果显示了在拓扑表面态中电荷电流引起的自旋极化的直接证据。有了自旋注入和检测的理解，它可能会为探索基于拓扑绝缘体和Ge纳米线的新型自旋电子器件提供巨大的机会。

著录项

  • 作者

    Tang, Jianshi.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 229 p.
  • 总页数 229
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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