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Quaternary indium gallium aluminum arsenide/indium aluminum arsenide quantum wells for 1.3 micron electroabsorption modulators

机译：用于1.3微米电吸收调制器的季铟镓铝砷化物/砷化铟铝量子阱

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作者
Cheng, An-Nien;
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作者单位

University of California San Diego;

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授予单位 University of California San Diego;
学科
学位 Ph.D.
年度 1994
页码 208 p.
总页数 208
原文格式 PDF
正文语种 eng
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2. Effect of Low-Energy Gallium-Aluminum-Arsenide and Aluminium Gallium Indium Phosphide Laser Irradiation on the Viability of C2C12 Myoblasts in a Muscle Injury Model [J] . Marcos Paulo Pinheiro Ferreira, Raquel Agnelli Mesquita Ferrari, Erick Diomedesse Gravalos, Photomedicine and Laser Surgery . 2009,第6期

机译：低能砷化镓铝铝和磷化铝镓铟激光对肌肉损伤模型中C2C12成肌细胞活力的影响
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4. Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate [C] . Lyamkina A.A., Dmitriev D.V., Moshchenko S.P., 10th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM 2009) . 2009

机译：砷化镓（001）衬底上砷化铟量子点形成的动力学
5. Design, Growth and Optimization of 2-micron Indium Gallium Antimonide/Aluminum Gallium Antimonide quantum well based VECSELs on Gallium Arsenide/Aluminum Gallium Arsenide DBRs. [D] . Ahirwar, Pankaj. 2013

机译：在砷化镓/砷化铝镓DBR上设计，生长和优化基于2微米铟镓铟/锑化铝镓量子阱的VECSEL。
6. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode [O] . Hiroki Hamada 2017

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7. Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm [O] . Johns Steven 1964- 1991

机译：砷化镓铟/铝铟砷化物和砷化镓铝铟砷/铝铟砷化物MQW器件在1.3μm的室温载流子寿命和光学非线性

Quaternary indium gallium aluminum arsenide/indium aluminum arsenide quantum wells for 1.3 micron electroabsorption modulators

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