• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Synthesis and characterization of tantalum and group 6 metal complexes containing nitrogen donor ligands as potential source compounds for thin film growth and atomic layer deposition using novel precursors.
【24h】

Synthesis and characterization of tantalum and group 6 metal complexes containing nitrogen donor ligands as potential source compounds for thin film growth and atomic layer deposition using novel precursors.

机译：钽和含氮供体配体的第6组金属配合物的合成和表征，使用新的前体作为薄膜生长和原子层沉积的潜在来源化合物。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Tantalum(V) oxide films have been deposited by atomic layer deposition (ALD) using tert-butylimidotris(di-tert-butylpyrazolato)tantalum and ozone as precursors. Self-limited growth was demonstrated at a deposition temperature of 325°C. Between 300 and 450°C, the growth rate remained constant at approximately 0.30 A/cycle. At 475-500°C, the growth rate increased to 0.35-0.41 A/cycle, whereas at 250-275 °C, the growth rate decreased to 0.14-0.20 A/cycle. The films were amorphous as-deposited, and crystallized as hexagonal delta-Ta2O5 upon annealing. Atomic force microscopy revealed the film surfaces to be smooth, with rms roughnesses of 0.4-0.8 nm. Scanning electron microscopy showed smooth, pinhole-free films at all magnifications.;A series of tantalum complexes containing imido, amidinate, and either halide or dialkylamide ligands has been synthesized. All of these complexes are volatile; they sublime between 120-203°C. Several of these complexes possess high thermal stability and undergo solid-state decomposition around or above 300°C. The most promising complex of this series, tert -butylimidobis(diisopropylacetamidinato)dimethylamidotantalum, was used as an ALD precursor to Ta2O5 films, with water as the oxygen source. Self-limited growth was demonstrated at 325°C. This process exhibits an ALD window with a constant growth rate of 0.28 A/cycle between 275 and 350°C. Above and below this temperature range, increased growth rates were observed; at 375-400°C, the growth rate was 0.31 A/cycle, and at 225-250°C, the growth rate was 0.33-0.37 A/cycle. The films were amorphous as-deposited, and crystallized as hexagonal delta-Ta 2O5 upon annealing. Atomic force microscopy revealed the film surfaces to be smooth, with rms roughnesses of 0.6-0.7 nm.;A series of molybdenum(III) and tungsten(III) dimers containing four dimethylamido ligands and either two pyrazolate or an amidinate and a chloride ligand was synthesized. These dimers were studied by variable temperature NMR, due to their fluxionality on the NMR timescale. The dimers possess limited thermal stability and decompose upon attempted sublimation.
机译：氧化钽（V）薄膜已通过原子层沉积（ALD）沉积，使用的是叔丁基亚氨基二碘（二叔丁基吡唑并合）钽和臭氧作为前体。在325°C的沉积温度下证明了自限生长。在300到450°C之间，增长率保持恒定在大约0.30 A /周期。在475-500°C下，增长率增加到0.35-0.41 A /周期，而在250-275°C下，增长率降低到0.14-0.20 A /周期。该膜是非晶态沉积的，并且在退火时结晶为六边形δ-Ta2 O 5。原子力显微镜显示膜表面光滑，均方根粗糙度为0.4-0.8 nm。扫描电子显微镜在所有放大倍数下均显示出光滑，无针孔的薄膜。合成了一系列含亚氨基，a基以及卤化物或二烷基酰胺配体的钽配合物。所有这些复合物都是易挥发的。它们在120-203°C之间升华。这些配合物中的几种具有高的热稳定性，并在300°C或更高温度下发生固态分解。该系列中最有前途的配合物叔丁基亚氨基双（二异丙基乙酰胺基）二甲基氨基钽被用作Ta2O5薄膜的ALD前驱体，其中水为氧源。在325°C表现出自我限制的生长。此过程显示ALD窗口，在275至350°C之间具有0.28 A /循环的恒定增长率。高于和低于此温度范围，观察到增长率的增加；在375-400℃下，生长速率为0.31A /周期，在225-250℃下，生长速率为0.33-0.37A /周期。该膜是非晶态沉积的，并且在退火时结晶为六边形δ-Ta2O 5。原子力显微镜显示膜表面光滑，均方根粗糙度为0.6-0.7 nm。一系列含有四个二甲基酰胺基配体以及两个吡唑酸酯或an基和氯化物配体的钼（III）和钨（III）二聚体是合成的。由于它们在NMR时标上的通量，因此通过可变温度NMR研究了这些二聚物。二聚体具有有限的热稳定性，并且在尝试升华时分解。

著录项

  • 作者

    Wiedmann, Monika Karin.;

  • 作者单位

    Wayne State University.;

  • 授予单位 Wayne State University.;
  • 学科 Chemistry Inorganic.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 174 p.
  • 总页数 174
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无机化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号