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Investigation of amorphous silicon carbide:hydrogen and Parylene-C thin films as encapsulation materials for neural interface devices.

机译：研究无定形碳化硅：氢和聚对二甲苯-C薄膜作为神经接口设备的封装材料。

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摘要

Neural interface devices have been developed for neuroscience and neuroprosthetics applications to record and stimulate nerve signals. Chronic use of these devices is prevented by their lack of long-term stability due to device failure or immune system responses. Fully integrated, wireless, silicon-based neural interface (INI) devices are being developed to address the main failure modes by eliminating the wired connections. Furthermore, chronic stable, conformal, hermetic, biocompatible, and electrically insulating coating materials that sustain chronic implantation and guarantee stable recording or stimulation are needed. Even though a large selection of materials has been proposed and tested for this purpose, to date, no encapsulation material or coating process presented in scientific literature has been thoroughly characterized or qualified as long-term hermetic encapsulation for silicon micro-electrode arrays.; In this work, hydrogenated amorphous silicon carbide (a-SiCx:H) and Parylene-C films were investigated as encapsulation materials. The deposition parameters and corresponding film properties were explored and correlated with the encapsulation characteristics.; The bond configuration of the deposited a-SiCx:H films was analyzed by FT-IR in order to develop films with strong chemical structure and low defect density. Film properties were optimized based on the bond configuration and process temperature requirements (200°C). The long-term stability of optimized a-SiCx:H films was studied by electrochemical impedance spectroscopy (EIS) and dissolution tests. EIS showed electrical stability of a-SiCx:H films over a 6-month period. Dissolution tests indicated no discernible dissolution during a 4-week soaking in 90°C phosphate buffered saline (PBS). These accelerated aging tests make a-SiCx:H films a promising candidate as encapsulation.; A second material, Parylene-C, was studied as dielectric encapsulation. The electrically insulating properties of Parylene-C films were investigated using EIS and leakage current tests. Both tests in 37°C saline solution showed hermetic protection and a long-term stability (> 12 months). Oxygen plasma etching processes necessary for deinsulation of the electrode tips and the etching performance on the Parylene-C were investigated, and the relationship between tip exposure and electrode impedance was studied.; Excellent encapsulation properties of Parylene-C were demonstrated. The correlation between process parameters and Parylene-C properties was investigated, including surface topography, adhesion, and crystallinity.
机译：已经开发出用于神经科学和神经修复应用的神经接口设备，以记录和刺激神经信号。由于设备故障或免疫系统反应，它们缺乏长期稳定性，可防止长期使用这些设备。正在开发完全集成的，基于硅的无线神经接口（INI）设备，以通过消除有线连接来解决主要故障模式。此外，需要能够维持长期植入并保证稳定记录或刺激的长期稳定，保形，气密，生物相容和电绝缘的涂层材料。尽管为此目的已经提出并测试了大量的材料，但是迄今为止，科学文献中没有提出的密封材料或涂覆工艺没有被完全表征或鉴定为用于硅微电极阵列的长期密封。在这项工作中，研究了氢化非晶碳化硅（a-SiCx：H）和聚对二甲苯-C薄膜作为封装材料。探索了沉积参数和相应的膜性质，并将其与包封特性相关联。通过FT-IR分析沉积的a-SiCx：H薄膜的键构型，以开发具有强化学结构和低缺陷密度的薄膜。根据粘合结构和工艺温度要求（<200°C）优化了薄膜性能。通过电化学阻抗谱（EIS）和溶出度试验研究了优化的a-SiCx：H薄膜的长期稳定性。 EIS在6个月的时间内显示出a-SiCx：H薄膜的电稳定性。溶出度测试表明，在90°C磷酸盐缓冲液（PBS）中浸泡4周后，没有明显的溶出度。这些加速的老化测试使a-SiCx：H薄膜有望成为封装材料。研究了第二种材料Parylene-C作为电介质封装。使用EIS和泄漏电流测试研究了Parylene-C薄膜的电绝缘性能。两种在37°C盐水溶液中进行的测试均显示出密封保护和长期稳定性（> 12个月）。研究了电极尖端去绝缘所必需的氧等离子体蚀刻工艺和在Parylene-C上的蚀刻性能，并研究了尖端暴露与电极阻抗之间的关系。展示了Parylene-C优异的封装性能。研究了工艺参数与聚对二甲苯-C性能之间的相关性，包括表面形貌，附着力和结晶度。

著录项

  • 作者

    Hsu, Jui-Mei.;

  • 作者单位

    The University of Utah.;

  • 授予单位 The University of Utah.;
  • 学科 Engineering Biomedical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 181 p.
  • 总页数 181
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 生物医学工程;工程材料学;
  • 关键词

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