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Investigation of the near surface mechanical properties of gold-silicon thin films.

机译：金硅薄膜的近表面力学性能研究。

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摘要

An investigation of the material properties of polycrystalline Au films and the effect of Si content on the material properties and structure of co-evaporated Au-Si films has been performed. Atomic Force Microscopy (AFM), nanoindentation and four-point probe were utilized to investigate the surface topography, mechanical and electrical properties of these films, respectively. X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) measurements were performed to investigate the material crystallography and structure.;The hardness of pure Au films was found to be approximately 1.2 GPa and increased by about 40--80% (1.64 GPa--2.13 GPa) by the addition of 2.5 and 6 at. % Si, respectively and approximately 102% to 2.41 GPa by the addition of 21 at. % Si. The film resistivity increased nearly linearly from 5.58--38.15 microO-cm as the Si content increased from 2.5--21 at. %, respectively.;XRD measurements on the Au/21 at. % Si film suggested the formation of an unknown crystalline Au-Si phase. The metastability of this phase was shown experimentally by performing a second XRD measurement on the same specimen after an 8 week room temperature storage period which indicated that the unknown Au-Si surface phase present had almost completely dissociated. The hardness and reduced elastic modulus decreased by approximately 32% from 2.41--1.65 GPa and 53% from 88--41.5 GPa, respectively.;TEM measurements, conducted on an Au/25 at. % Si specimen, showed the nanocrystalline grain structure of the Au, with an average grain size of 18 nm (consistent with the XRD measurement), with a dispersion of amorphous Si particles approximately 1--5 nm in diameter. From these results, the predicted hardness increase of the Au-Si film resulting from the Orowan hardening mechanism was estimated to be HOrowan ≈ 0.05 GPa--1.07 GPa representing approximately 4--88% of the overall hardness increase measured for the Au/21 at. % Si film assuming the same Si content for the TEM specimens. The estimated HOrowan range suggested that additional mechanisms, such as the Hall-Petch effect, may be responsible for the measured hardness increase.
机译：研究了多晶金膜的材料性能以及硅含量对共蒸发金硅膜的材料性能和结构的影响。利用原子力显微镜（AFM），纳米压痕和四点探针分别研究了这些薄膜的表面形貌，机械性能和电性能。进行了X射线衍射（XRD）和透射电子显微镜（TEM）测量以研究材料的晶体学和结构;纯金膜的硬度约为1.2 GPa，并且增加了约40--80％（1.64） GPa--2.13 GPa）通过添加2.5和6 at。通过添加21at。％Si分别约2.4％GPa和约102％至2.41GPa。 Si％随着Si含量从2.5--21 at增加，薄膜电阻率从5.58--38.15 microO-cm几乎线性增加。在Au / 21 at的XRD测量。 Si膜％表明形成了未知的晶体Au-Si相。在室温保存8周后，通过对同一样品进行第二次XRD测量，通过实验显示了该相的亚稳定性。这表明存在的未知Au-Si表面相几乎已完全解离。硬度和降低的弹性模量分别从2.41--1.65 GPa和32-88--41.5 GPa降低了约32％和53％。TEM测量是在Au / 25 at。 ％的Si样品显示出Au的纳米晶粒结构，其平均晶粒尺寸为18nm（与XRD测量一致），并且具有约1--5nm直径的非晶态Si颗粒的分散体。根据这些结果，由Orowan硬化机理导致的Au-Si膜的预测硬度增加被估计为HOrowan＆ap; p。 0.05 GPa--1.07 GPa约占Au / 21 at的总硬度增加的4--88％。假设TEM样品中的Si含量相同，则％Si薄膜。估计的霍洛范围（Horowan range）表明，其他机制（例如霍尔-帕奇效应）可能是导致硬度增加的原因。

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  • 作者

    Dvorak, Benjamin Michael.;

  • 作者单位

    Oklahoma State University.;

  • 授予单位 Oklahoma State University.;
  • 学科 Engineering Mechanical.;Engineering Materials Science.
  • 学位 M.S.
  • 年度 2008
  • 页码 121 p.
  • 总页数 121
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;工程材料学;
  • 关键词

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