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Electrical activation studies of silicon implanted aluminum gallium nitride with high aluminum mole fraction

机译：具有高铝摩尔分数硅植入铝镓氮化铝的电激活研究

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作者
Moore, Elizabeth A.;
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作者单位

Air Force Institute of Technology;

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授予单位 Air Force Institute of Technology;
学科
学位 Ph.D.
年度 2007
页码 289 p.
总页数 289
原文格式 PDF
正文语种 eng
中图分类 AAI3288581;
关键词
Aluminum gallium nitride; Cathodoluminescence; Electrical activation; Hall effect; Ion implantation;

机译：氮化铝镓;阴极致发光;电气激活;霍尔效应;离子植入;

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1. Electrical Activation Studies of Silicon-Implanted Al_(x)Ga_(1-x)N with Aluminum Mole Fraction of 11percent to 51percent [J] . E.A. MOORE, Y.K. YEO, MEE-YI RYU, Journal of Electronic Materials . 2011,第1期

机译：铝摩尔分数为11％至51％的硅注入Al_（x）Ga_（1-x）N的电活化研究
2. Electrical Activation Studies of Silicon-Implanted Al_xGa_1−xN with Aluminum Mole Fraction of 11% to 51% [J] . E. A. Moore, Y. K. Yeo, Mee-Yi Ryu, Journal of Electronic Materials . 2011,第1期

机译：铝摩尔分数为11％至51％的硅注入的Al _{x Ga _{1-x N的电活化研究}}
3. Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al_(x)Ga_(1-x)N with High Aluminum Mole Fraction [J] . E.A. MOORE, Y.K. YEO, MEE-YI RYU, Journal of Electronic Materials . 2009,第1期

机译：高铝摩尔分数的硅注入Al_（x）Ga_（1-x）N的近乎完美的电活化效率
4. Contacts to high aluminum fraction p-type aluminum gallium nitride [C] . Brett A.Hull, Suzanne E.Mohney, Uttiya Chowdhury, Materials Research Society Symposium . 2003

机译：对高铝级分P型铝镓氮化物的触点
5. Investigation of electrically active defects in gallium nitride, aluminum gallium nitride , and aluminum gallium nitride/gallium nitride high electron mobility transistors [D] . Arehart, Aaron R. 2009

机译：研究氮化镓，氮化铝镓和氮化铝镓/氮化镓高电子迁移率晶体管中的电活性缺陷
6. The Effects of Aluminum-Nitride Nano-Fillers on the Mechanical Electrical and Thermal Properties of High Temperature Vulcanized Silicon Rubber for High-Voltage Outdoor Insulator Applications [O] . Chang Liu, Yiwen Xu, Daoguang Bi, 2019

机译：氮化铝纳米填充剂对高压户外绝缘子应用的高温硫化硅橡胶的机械电气和热性能的影响
7. Electrical Characterization of High-k Anodic Aluminum Oxide Gate Dielectrics on Gallium Nitride Substrate MOS Capacitors [O] . C. T. Lee 2012

机译：氮化镓衬底MOS电容器上高k阳极氧化铝栅极电介质的电学特性
8. Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction; Dissertation [R] . Moore, E. A. 2007

机译：高铝摩尔分子硅注入氮化铝镓的电学活化研究2。论文

Electrical activation studies of silicon implanted aluminum gallium nitride with high aluminum mole fraction

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