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首页> 外文学位 >Investigation of ball bond integrity for 0.8 mil (20 microns) diameter gold bonding wire on low k die in wire bonding technology.
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Investigation of ball bond integrity for 0.8 mil (20 microns) diameter gold bonding wire on low k die in wire bonding technology.

机译：在引线键合技术中，研究低k裸片上直径为0.8密耳（20微米）的金键合引线的球形键合完整性。

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摘要

Microelectronics technology has been undergoing continuous scaling to accommodate customer driven demand for smaller, faster and cheaper products. This demand has been satisfied by using novel materials, design techniques and processes. This results in challenges for the chip connection technology and also the package technology. The focus of this research endeavor was restricted to wire bond interconnect technology using gold bonding wires. Wire bond technology is often regarded as a simple first level interconnection technique. In reality, however, this is a complex process that requires a thorough understanding of the interactions between the design, material and process variables, and their impact on the reliability of the bond formed during this process.;This research endeavor primarily focused on low diameter, 0.8 mil thick (20 mum) diameter gold bonding wire. Within the scope of this research, the integrity of the ball bond formed by 1.0 mil (25 mum) and 0.8 mil (20 mum) diameter wires was compared. This was followed by the evaluation of bonds formed on bond pads having doped SiO2 (low k) as underlying structures. In addition, the effect of varying the percentage of the wire dopant, palladium and bonding process parameters (bonding force, bond time, ultrasonic energy) for 0.8 mil (20 mum) bonding wire was also evaluated. Finally, a degradation empirical model was developed to understand the decrease in the wire strength.;This research effort helped to develop a fundamental understanding of the various factors affecting the reliability of a ball bond from a design (low diameter bonding wire), material (low k and bonding wire dopants), and process (wire bonding process parameters) perspective for a first level interconnection technique, namely wire bonding. The significance of this research endeavor was the systematic investigation of the ball bonds formed using 0.8 mil (20 microm) gold bonding wire within the wire bonding arena. This research addressed low k structures on 90 nm silicon technology, bonding wires with different percentage of doping element (palladium), and different levels of bonding process parameters. An empirical model to understand the high temperature effects for bonds formed using the low diameter wire was also developed.
机译：微电子技术一直在不断扩展，以适应客户驱动的对更小，更快和更便宜产品的需求。通过使用新颖的材料，设计技术和工艺已经满足了这一需求。这给芯片连接技术以及封装技术带来了挑战。这项研究的重点仅限于使用金焊线的焊线互连技术。引线键合技术通常被认为是一种简单的一级互连技术。然而，实际上，这是一个复杂的过程，需要彻底了解设计，材料和过程变量之间的相互作用，以及它们对在此过程中形成的键的可靠性的影响。 ，直径为20毫米（0.8密耳）的金焊线。在这项研究的范围内，比较了直径为100密耳（25毫米）和直径为80密耳（20毫米）的焊球的完整性。随后评估形成在掺杂垫上的SiO2（低k）作为底层结构的焊盘上的键。此外，还评估了针对0.8密耳（20毫米）键合线改变导线掺杂物，钯的百分比和键合工艺参数（键合力，键合时间，超声能量）的效果。最后，建立了退化经验模型以了解导线强度的降低。;这项研究工作有助于从设计（低直径键合导线），材料（低k和键合引线掺杂剂），以及第一级互连技术（即键合引线）的工艺（引线键合工艺参数）透视图。这项研究工作的意义在于系统地研究在引线键合领域内使用0.8密耳（20微米）金键合线形成的球形键合。这项研究针对的是90 nm硅技术上的低k结构，具有不同百分比的掺杂元素（钯）的键合线以及不同水平的键合工艺参数。还建立了一个经验模型来理解使用低直径金属丝形成的键合的高温效应。

著录项

  • 作者

    Kudtarkar, Santosh Anil.;

  • 作者单位

    State University of New York at Binghamton.;

  • 授予单位 State University of New York at Binghamton.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 207 p.
  • 总页数 207
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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