• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >A Study of Electromigration from Superconducting to Normal Conducting Metals
【24h】

A Study of Electromigration from Superconducting to Normal Conducting Metals

机译：超导金属向正导电金属的电迁移研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A study of the potential for electromigration to occur in indium solder balls at liquid helium temperature was conducted. The solder balls were interconnected by means of niobium traces, which transitioned from niobium to indium throughout a flip-chip assembly. The niobium traces were superconducting at the liquid helium temperature. Because of reliability concerns with the use of indium in superconductivity applications, the potential for electromigration to occur at the superconducting niobium to normal conducting indium transitions was conducted. Because electromigration is a function of current density, temperature, and geometry, flip-chips were manufactured with indium solder balls of varying diameters. The flip-chips were stressed at a current level that was ~90% of the niobium's critical current, which ranged from 100 mA to 123 mA, and two tests were conducted. Each of the two such stress tests lasted a period of ~504 hours (3 weeks). The solder ball pitches for the first test were 35 micrometers with 17,200 solder balls within each flip-chip; for the second test, the solder ball pitches were 25 micrometers with 32,096 solder balls within each flip-chip and 35 micrometers with 77,520 solder balls within each flip-chip. Resistance of all samples was monitored continuously by automating the test equipment using a special Labview program, and the resistance did not change. With electromigration, an increase in the samples' resistance was expected to occur. No test samples exhibited any increases in their resistance, validating the notion that it is very unlikely for electromigration to occur at liquid helium temperatures, thereby ensuring the reliability of the flip chip design having indium solder balls.
机译：对液氦温度下铟焊球中发生电迁移的可能性进行了研究。锡球通过铌迹线相互连接，在整个倒装芯片组装中，铌迹线从铌过渡到铟。铌痕迹在液氦温度下是超导的。由于在超导性应用中使用铟会带来可靠性问题，因此进行了在超导铌向正常导电铟跃迁时发生电迁移的可能性。由于电迁移是电流密度，温度和几何形状的函数，因此倒装芯片是用直径不同的铟锡球制造的。倒装芯片承受的电流为铌临界电流的90％，电流范围为100 mA至123 mA，并进行了两次测试。两次这样的压力测试中的每一个都持续约504小时（3周）。第一次测试的焊球间距为35微米，每个倒装芯片内有17,200个焊球。对于第二个测试，焊球间距为25微米，每个倒装芯片内有32,096个焊球，以及35微米，每个倒装芯片内有77,520个焊球。通过使用特殊的Labview程序使测试设备自动化来连续监测所有样品的电阻，并且电阻没有变化。随着电迁移，预计样品电阻会增加。测试样品的电阻没有任何增加，这证实了在液氦温度下极不可能发生电迁移的观念，从而确保了具有铟焊球的倒装芯片设计的可靠性。

著录项

  • 作者

    Dugas, Jonathan M.;

  • 作者单位

    Tennessee Technological University.;

  • 授予单位 Tennessee Technological University.;
  • 学科 Electrical engineering.
  • 学位 M.S.
  • 年度 2017
  • 页码 257 p.
  • 总页数 257
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 地下建筑;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号