In order to overcome the shortcomings of electron beam evaporation technique and improve the adhesion strength between the film and substrate, RF autologous glow discharge is realized during the electron beam evaporation deposition process by placing a radio-frequency coil. The discharge parameters to the reflected power are studied. Results show that the discharge distance of 100mm is more appropriate parameters when the RF coil is 3-turn and its diameter is 82mm. The fluency of electron beam is above 160mA, the discharge is easier to happen, but when the electron beam is greater than 200mA, the film would be to fall off. From the experiment measurements of probe, it can be found that the ion density of the discharged plasma is more than 1.0 × 1010atom/cm3, moreover the increase of RF power causes the enhancement of ion density at various locations in the vacuum chamber, especially coil center. When RF power is 170W, the ion density of each location increases dramatically.%为了克服电子束蒸镀技术的不足,提高蒸镀薄膜与基体的膜基结合力,通过增加射频线圈的方法,在电子束蒸镀沉积过程中实现了射频自体辉光放电.研究了放电参数对射频辉光放电反射功率的影响规律,结果表明采用3匝直径82mm的射频线圈条件下,最佳放电距离为100cm.电子束流在160mA以上时,起辉较容易,但是电子束流大于200mA后,蒸镀的膜层容易脱落.通过静电探针分析发现,放电产生的等离子体中离子密度高于1.0×1010atom/cm3,射频功率的增大提高了真空室中各个位置处的离子密度,尤其是线圈中心位置,导致了真空室中离子密度径向位置的不均匀性.当射频功率为170W时,各位置的离子密度急剧增加.
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