通过设计用于MOCVD的多种Pocket规格的2”-54片的SiC涂层石墨基座,进行LFD外延生长得出Pocket台阶高度、Pocket底部形状与波长的关系,从而设计合适规格的量产SiC涂层石墨基座.%Through the design of SiC coated graphite susceptor multiple Pocket specifications MOCVD 2 "-54,make sure the relationship between pocket step height,pocket bottom shape and wavelength by LED epitaxy.So as to design the appropriate specifications of SiC coated graphite susceptor for LED epitaxy.
展开▼
