半金属材料Fe3O4具有理论上100%的自旋极化率，其居里温度高达860 K，具有室温操作的可能。此外， Fe3O4与MgO晶格具有较低的失配率（0.3%），将二者结合起来有利于磁阻的进一步提高，因此Fe3O4材料成为制备磁阻器件的候选材料。采用对靶磁控溅射的方法，实现了低温制备纳米级别Fe3O4(001)薄膜。利用X射线衍射测量，采用小角掠射（掠射角为2º）、2θ／θ联动模式、步进扫描方式，成功获得其择优取向的图谱。通过XRD与TEM截面样品暗场选区电子衍射相结合的方法，可以定性区分各层薄膜的择优取向。%Half metallic Fe3O4 films obtained an interest due to their theoretical 100%spin polarization and high curie temperature of 860 K. The combination of tunneling barrier MgO and Fe3O4 films with a low lattice misfit of 0.3%was expected to get a higher MR ratio. The epitaxial growth of (001)-oriented MgO layer and Fe3O4 (001) layer at low temperature were successful using Fe buffer layer on amorphous glass substrate. X-Ray diffraction with 2º grazing angle and FT scanning combined with 2θ/θmode was effective to measurement (001)-orientated films with weak crystallinity. The (001)-orientation of two different layers with small lattice misfit can be distinguished through combination of XRD and selected ED of TEM.
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