Photoelectrochemical (PEC) etching of Hydride Vapor Phase Epitaxy (HVPE) grown n-type GaN has been investigated. Direct evidence of etch-stop effect of dislocations has been found and discussedi.%对用氢化物气相外延(HVPE)方法生长的n型GaN进行光助电化学(PEC)腐蚀研究,发现了位错中止腐蚀的直接证据,并对其机理作了探讨。
展开▼