实现了一款超宽带低噪声放大器( UWB LNA)。该UWB LNA由输入级、中间级和输出级组成。在输入级,采用两个共栅配置构成了噪声抵消技术,减少了噪声,在此结构基础上进一步采用了跨导增强技术,提高了增益。同时插入的电感Lin提高了LNA在宽带范围内的增益平坦度。中间级放大器,在漏极并联电感产生零点,提高了LNA的带宽。输出级为源极跟随器,较好实现了LNA的阻抗匹配。基于0.18μm TSMC CMOS工艺仿真验证表明,在4 GHz~10 GHz频带范围内,电压增益( S21)为(19.2±0.3)dB,噪声系数(NF)介于2.1 dB~2.4 dB之间,输入、输出反射系数(S11、S22)均小于-10 dB。在9 GHz时,输入三阶交调点(IIP3)达到-7 dBm。在1.8 V的电源电压下,功耗为28.6 mW。%An ultra-wideband low noise amplifier ( UWB LNA) was presented. The UWB LNA is composed of input stage,intermediate stage and output stage. At input stage,noise cancellation structure constructed by two common-gate configuration is utilized to decrease noise figure,Gm-boost structure is used to enhance gain,the inserted inductor Lin improves the gain flatness of the LNA within the wideband. At intermediate stage,the bandwidth is broaden due to the zero generated by shunt inductor at the drain of amplifier. The output stage is a source follower which provides a good output matching easily. Based on 0.18μm standard CMOS process,the LNA is verified. The voltage gain( S21 ) main-tains 19.2 dB± 0.3 dB,noise figure(NF)swings from 2.1 dB to 2.4 dB,input reflection(S11)and output reflection (S22)are less than -10 dB within the range of 4 GHz~10 GHz. The input intercept point(IIP3)is-7 dBm at 9 GHz. The LNA consumes only 28.6 mW from a 1.8 V voltage.
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