为了在保留传统肖特基二极管正向压降低、电流密度大优点的基础上,使其反向击穿电压提高到了300 v以上,我们采用硅材料做为衬底,肖特基结区采用蜂房结构,终端采用两道场限环结构加一道切断环结构,所制备的肖特基二极管在正向电流10A时,正向压降仅为0.79 V；同时在施加300 V反向电压时,反向漏电流在5μA以下.%To retain the advantages of traditional Schottky diodes, such as high current density under low forward voltage and improve their breakdown voltage to above 300 V, we fabricated silicon-based novel structure JBS diodes. Its Schottky barrier area is a honey comb structure, and its terminal is formed by two floating field limiting rings(FLRs) plus a cutoff ring structure. Its forward voltage-drop is only 0. 79 V under 10 A current, while its leakage current is less than 5 (xA when 300 V reverse voltage is applied.
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