采用C,Si和SiO2为反应原料,利用直流电弧法制备出长直的β-SiC纳米线.纳米线的直径为100～200 nm,长度为10～20 μm,并且沿着<111>方向生长.通过X射线衍射(XRD)、扫描电子显微术(SEM)、透射电子显微术(TEM)、拉曼光谱等手段,对β-SiC纳米线进行表征.探讨了β-SiC纳米线自催化气-液-固(VLS)生长机制.%Straight and long β-SiC nanowires were synthesized in direct current arc discharge using a mixture of graphite, silicon, and silicon dioxide as the precursor. The diameter of the nanowires is 100～200 nm, and the length is about 10～20 μm. The axis of the nanowire is preferentially along the <111> direction. The morphology and structure of the nanowires were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. The β-SiC nanowires are suggested to be formed via a self-catalyzed vapor-liquid-solid growth mechanism.
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